Hydrogen passivation of nitrogen in SiC

A. Gali, P. Deák, N. T. Son, E. Janzén

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A study is performed on hydrogen passivation of nitrogen in SiC. The first-principles calculations show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. It is found that the complex is stable with respect to negatively charged hydrogen interstitials and isolated positive donors.

Original languageEnglish
Pages (from-to)1385-1387
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number7
DOIs
Publication statusPublished - Aug 18 2003

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passivity
nitrogen
hydrogen
interstitials

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gali, A., Deák, P., Son, N. T., & Janzén, E. (2003). Hydrogen passivation of nitrogen in SiC. Applied Physics Letters, 83(7), 1385-1387. https://doi.org/10.1063/1.1604461

Hydrogen passivation of nitrogen in SiC. / Gali, A.; Deák, P.; Son, N. T.; Janzén, E.

In: Applied Physics Letters, Vol. 83, No. 7, 18.08.2003, p. 1385-1387.

Research output: Contribution to journalArticle

Gali, A, Deák, P, Son, NT & Janzén, E 2003, 'Hydrogen passivation of nitrogen in SiC', Applied Physics Letters, vol. 83, no. 7, pp. 1385-1387. https://doi.org/10.1063/1.1604461
Gali, A. ; Deák, P. ; Son, N. T. ; Janzén, E. / Hydrogen passivation of nitrogen in SiC. In: Applied Physics Letters. 2003 ; Vol. 83, No. 7. pp. 1385-1387.
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