Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing

C. Frigeri, M. Serényi, N. Q. Khánh, A. Csík, L. Nasi, Z. Erdélyi, D. Beke, H. G. Boyen

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing.

Original languageEnglish
Pages (from-to)30-34
Number of pages5
JournalApplied Surface Science
Volume267
DOIs
Publication statusPublished - Feb 15 2013

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Dangling bonds
Passivation
Sputtering
Hydrogen
Nanostructures
Annealing

Keywords

  • Amorphous Si/Ge superlattice
  • Annealing
  • Blistering
  • Hydrogen
  • Nanostructure

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing. / Frigeri, C.; Serényi, M.; Khánh, N. Q.; Csík, A.; Nasi, L.; Erdélyi, Z.; Beke, D.; Boyen, H. G.

In: Applied Surface Science, Vol. 267, 15.02.2013, p. 30-34.

Research output: Contribution to journalArticle

Frigeri, C. ; Serényi, M. ; Khánh, N. Q. ; Csík, A. ; Nasi, L. ; Erdélyi, Z. ; Beke, D. ; Boyen, H. G. / Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing. In: Applied Surface Science. 2013 ; Vol. 267. pp. 30-34.
@article{cb72dce94e294f32bffc52a82aa77da8,
title = "Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing",
abstract = "The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing.",
keywords = "Amorphous Si/Ge superlattice, Annealing, Blistering, Hydrogen, Nanostructure",
author = "C. Frigeri and M. Ser{\'e}nyi and Kh{\'a}nh, {N. Q.} and A. Cs{\'i}k and L. Nasi and Z. Erd{\'e}lyi and D. Beke and Boyen, {H. G.}",
year = "2013",
month = "2",
day = "15",
doi = "10.1016/j.apsusc.2012.05.030",
language = "English",
volume = "267",
pages = "30--34",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing

AU - Frigeri, C.

AU - Serényi, M.

AU - Khánh, N. Q.

AU - Csík, A.

AU - Nasi, L.

AU - Erdélyi, Z.

AU - Beke, D.

AU - Boyen, H. G.

PY - 2013/2/15

Y1 - 2013/2/15

N2 - The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing.

AB - The relationship between blistering, H content and de-passivation of the dangling bonds has been studied in annealed hydrogenated a-Si/a-Ge superlattice (SL) nanostructures grown by RF sputtering. Measurements have been carried out by ERDA, IR absorbance and AFM. By comparison with parallel investigations on a-Si and a-Ge single layers it has been established that the bubbles causing blistering in the annealed SLs very likely start to grow in the Ge layers of the SL because H is released from Ge much earlier than from Si. It is shown that the H forming the bubbles is only a fraction of the H liberated during the annealing.

KW - Amorphous Si/Ge superlattice

KW - Annealing

KW - Blistering

KW - Hydrogen

KW - Nanostructure

UR - http://www.scopus.com/inward/record.url?scp=84873701674&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873701674&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2012.05.030

DO - 10.1016/j.apsusc.2012.05.030

M3 - Article

AN - SCOPUS:84873701674

VL - 267

SP - 30

EP - 34

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -