H2O2-molecular beam epitaxy of high quality ZnO

A. El Shaer, A. Bakin, A. Che Mofor, J. Bläsing, A. Krost, J. Stoimenos, B. Pécz, M. Kreye, A. Waag

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We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H2O2-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphirewith a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H 2O2-MBE is a suitable technique to fabricate ZnO epilayers of very high quality.

Original languageEnglish
Pages (from-to)57-60
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Issue number1
Publication statusPublished - Jul 1 2007

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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    El Shaer, A., Bakin, A., Che Mofor, A., Bläsing, J., Krost, A., Stoimenos, J., Pécz, B., Kreye, M., & Waag, A. (2007). H2O2-molecular beam epitaxy of high quality ZnO. Applied Physics A: Materials Science and Processing, 88(1), 57-60. https://doi.org/10.1007/s00339-007-3959-z