H2-induced surface and interface potentials on Pd-activated SnO2 sensor films

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The surface and interface potentials of an SnO2 gas-sensor film have been investigated by a vibrating capacitor probe, resistivity measurements, the MOS QV method and thermoelectric power measurements. All results are converted into potential changes, and plotted as a function of the H2 partial pressure in the ambient air. The maximum value of the potential change on the surface is about 0.5-0.6 V. Potential changes calculated from the resistivity measurements are smaller, as well as the potential changes at the SnO2substrate interface. Based on the results, a simple energy-band model and the charge-carrier concentrations are discussed.

Original languageEnglish
Pages (from-to)129-133
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume28
Issue number2
Publication statusPublished - Aug 1995

Fingerprint

sensors
Sensors
Thermoelectric power
Chemical sensors
Charge carriers
Partial pressure
Band structure
Carrier concentration
Capacitors
electrical resistivity
energy bands
partial pressure
charge carriers
Air
capacitors
probes
air
gases

Keywords

  • Hydrogen sensors
  • Interface potentials
  • Surface potentials
  • Tin oxide

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Analytical Chemistry
  • Electrochemistry

Cite this

H2-induced surface and interface potentials on Pd-activated SnO2 sensor films. / Mizsei, J.

In: Sensors and Actuators, B: Chemical, Vol. 28, No. 2, 08.1995, p. 129-133.

Research output: Contribution to journalArticle

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