H2-induced surface and interface potentials on Pd-activated SnO2 sensor films

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30 Citations (Scopus)

Abstract

The surface and interface potentials of an SnO2 gas-sensor film have been investigated by a vibrating capacitor probe, resistivity measurements, the MOS QV method and thermoelectric power measurements. All results are converted into potential changes, and plotted as a function of the H2 partial pressure in the ambient air. The maximum value of the potential change on the surface is about 0.5–0.6 V. Potential changes calculated from the resistivity measurements are smaller, as well as the potential changes at the SnO2substrate interface. Based on the results, a simple energy-band model and the charge-carrier concentrations are discussed.

Original languageEnglish
Pages (from-to)129-133
Number of pages5
Journal"Sensors and Actuators, B: Chemical"
Volume28
Issue number2
DOIs
Publication statusPublished - Jan 1 1995

Keywords

  • Hydrogen sensors
  • Interface potentials
  • Surface potentials
  • Tin oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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