Homogeneity check of ion implantation in silicon by wide-angle ellipsometry

M. Fried, G. Juhász, C. Major, P. Petrik, G. Battistig

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ion implantation is playing an important role in the fabrication of semiconductor devices, in which the precise control of the dose-homogeneity of dopants is required. As radiation-caused disorder changes the refractive index of single-crystalline silicon significantly, the relative damage can be sensitively measured by optical techniques like ellipsometry. 2 keV Arsenic, 20 keV Boron and BF2 ions were implanted at room temperature into single-crystalline silicon. Doses from 5E12 cm-2 to 5E15 cm -2 were used to cover the range from slightly damaged to totally amorphized layers. The measurements were performed using wide-angle, fast mapping ellipsometry (WAE) developed in our Institute. The relative damage was characterized via complex pseudo dielectric function or using Bruggeman effective medium approximation combining the dielectric function of single-crystalline and ion implantation-amorphized silicon. The depth distribution of damage was described by a simple box-type optical model using two parameters only: effective thickness and effective damage of the implanted layer. The ellipsometric results were cross-checked using ion backscattering spectrometry combined with channeling. The results show that wide-angle ellipsometry can be a sensitive and cheap tool for homogeneity check after an appropriate calibration.

Original languageEnglish
Title of host publication17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
DOIs
Publication statusPublished - 2009
Event17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009 - Albany, NY, United States
Duration: Sep 29 2009Oct 2 2009

Other

Other17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009
CountryUnited States
CityAlbany, NY
Period9/29/0910/2/09

Fingerprint

Ellipsometry
Silicon
Ion implantation
Crystalline materials
Ions
Boron
Arsenic
Backscattering
Semiconductor devices
Spectrometry
Dosimetry
Refractive index
Doping (additives)
Calibration
Radiation
Fabrication
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Fried, M., Juhász, G., Major, C., Petrik, P., & Battistig, G. (2009). Homogeneity check of ion implantation in silicon by wide-angle ellipsometry. In 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009 [5373448] https://doi.org/10.1109/RTP.2009.5373448

Homogeneity check of ion implantation in silicon by wide-angle ellipsometry. / Fried, M.; Juhász, G.; Major, C.; Petrik, P.; Battistig, G.

17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 2009. 5373448.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fried, M, Juhász, G, Major, C, Petrik, P & Battistig, G 2009, Homogeneity check of ion implantation in silicon by wide-angle ellipsometry. in 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009., 5373448, 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009, Albany, NY, United States, 9/29/09. https://doi.org/10.1109/RTP.2009.5373448
Fried M, Juhász G, Major C, Petrik P, Battistig G. Homogeneity check of ion implantation in silicon by wide-angle ellipsometry. In 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 2009. 5373448 https://doi.org/10.1109/RTP.2009.5373448
Fried, M. ; Juhász, G. ; Major, C. ; Petrik, P. ; Battistig, G. / Homogeneity check of ion implantation in silicon by wide-angle ellipsometry. 17th IEEE Conference on Advanced Thermal Processing of Semiconductors, RTP 2009. 2009.
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