Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

P. Eklund, A. Murugaiah, J. Emmerlich, Z. Czigány, J. Frodelius, M. W. Barsoum, H. Högberg, L. Hultman

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.

Original languageEnglish
Pages (from-to)264-269
Number of pages6
JournalJournal of Crystal Growth
Volume304
Issue number1
DOIs
Publication statusPublished - Jun 1 2007

Fingerprint

Thin films
Substrates
thin films
minorities
Magnetron sputtering
Heterojunctions
magnetron sputtering
direct current
Ti3SiC2
Chemical analysis

Keywords

  • A1. Scanning electron microscopy
  • A1. Transmission electron microscopy
  • A1. X-ray diffraction
  • A3. Physical vapor deposition processes
  • B1. Carbides
  • B1. Nanomaterials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Eklund, P., Murugaiah, A., Emmerlich, J., Czigány, Z., Frodelius, J., Barsoum, M. W., ... Hultman, L. (2007). Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates. Journal of Crystal Growth, 304(1), 264-269. https://doi.org/10.1016/j.jcrysgro.2007.02.014

Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates. / Eklund, P.; Murugaiah, A.; Emmerlich, J.; Czigány, Z.; Frodelius, J.; Barsoum, M. W.; Högberg, H.; Hultman, L.

In: Journal of Crystal Growth, Vol. 304, No. 1, 01.06.2007, p. 264-269.

Research output: Contribution to journalArticle

Eklund, P, Murugaiah, A, Emmerlich, J, Czigány, Z, Frodelius, J, Barsoum, MW, Högberg, H & Hultman, L 2007, 'Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates', Journal of Crystal Growth, vol. 304, no. 1, pp. 264-269. https://doi.org/10.1016/j.jcrysgro.2007.02.014
Eklund, P. ; Murugaiah, A. ; Emmerlich, J. ; Czigány, Z. ; Frodelius, J. ; Barsoum, M. W. ; Högberg, H. ; Hultman, L. / Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates. In: Journal of Crystal Growth. 2007 ; Vol. 304, No. 1. pp. 264-269.
@article{4fd715dfa953468999359da120b1658d,
title = "Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates",
abstract = "Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.",
keywords = "A1. Scanning electron microscopy, A1. Transmission electron microscopy, A1. X-ray diffraction, A3. Physical vapor deposition processes, B1. Carbides, B1. Nanomaterials",
author = "P. Eklund and A. Murugaiah and J. Emmerlich and Z. Czig{\'a}ny and J. Frodelius and Barsoum, {M. W.} and H. H{\"o}gberg and L. Hultman",
year = "2007",
month = "6",
day = "1",
doi = "10.1016/j.jcrysgro.2007.02.014",
language = "English",
volume = "304",
pages = "264--269",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

AU - Eklund, P.

AU - Murugaiah, A.

AU - Emmerlich, J.

AU - Czigány, Z.

AU - Frodelius, J.

AU - Barsoum, M. W.

AU - Högberg, H.

AU - Hultman, L.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.

AB - Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.

KW - A1. Scanning electron microscopy

KW - A1. Transmission electron microscopy

KW - A1. X-ray diffraction

KW - A3. Physical vapor deposition processes

KW - B1. Carbides

KW - B1. Nanomaterials

UR - http://www.scopus.com/inward/record.url?scp=34247620270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247620270&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2007.02.014

DO - 10.1016/j.jcrysgro.2007.02.014

M3 - Article

VL - 304

SP - 264

EP - 269

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -