Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates

P. Eklund, A. Murugaiah, J. Emmerlich, Zs Czigàny, J. Frodelius, M. W. Barsoum, H. Högberg, L. Hultman

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

Ti3SiC2 films were grown on polycrystalline Ti3SiC2 bulk substrates using DC magnetron sputtering. The crystallographic orientation of the film grains is shown to be determined by the respective substrate-grain orientation through homoepitaxial MAX-phase growth. For a film composition close to Ti:Si:C=3:1:2, the films predominantly consist of MAX phases, both Ti3SiC2 and the metastable Ti4SiC3. Lower Si content resulted in growth of TiC with Ti3SiC2 as a minority phase. Thus, MAX-phase heterostructures with preferred crystallographic relationships can also be realized.

Original languageEnglish
Pages (from-to)264-269
Number of pages6
JournalJournal of Crystal Growth
Volume304
Issue number1
DOIs
Publication statusPublished - Jun 1 2007

Keywords

  • A1. Scanning electron microscopy
  • A1. Transmission electron microscopy
  • A1. X-ray diffraction
  • A3. Physical vapor deposition processes
  • B1. Carbides
  • B1. Nanomaterials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Eklund, P., Murugaiah, A., Emmerlich, J., Czigàny, Z., Frodelius, J., Barsoum, M. W., Högberg, H., & Hultman, L. (2007). Homoepitaxial growth of Ti-Si-C MAX-phase thin films on bulk Ti3SiC2 substrates. Journal of Crystal Growth, 304(1), 264-269. https://doi.org/10.1016/j.jcrysgro.2007.02.014