Hole Mobility in Acceptor‐Doped, Monocrystalline SrTiO3

Maximilian Fleischer, H. Meixner, Christian Tragut

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The oxidation reaction equilibrium constant and the holes mobility in p‐type‐semiconducting SrTiO3 single crystals were determined directly by simultaneous Hall and conductivity measurements between 500° and 1000°C. This information and the SrTiO3 defect model were used to interpret the electrical measurements taken on this substance which represents a model substance for semiconducting perovskites. Measurements with varying oxygen partial pressures showed that shifts of the crystal defect equilibrium give rise to changes in the carrier concentration with unchanged carrier mobility.

Original languageEnglish
Pages (from-to)1666-1668
Number of pages3
JournalJournal of the American Ceramic Society
Volume75
Issue number6
DOIs
Publication statusPublished - 1992

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Hole mobility
Crystal defects
Carrier mobility
Equilibrium constants
Partial pressure
Carrier concentration
Single crystals
Oxygen
Oxidation
Defects
strontium titanium oxide

Keywords

  • electrical properties
  • holes
  • mobility
  • oxygen partial pressure
  • strontium titanate

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Cite this

Hole Mobility in Acceptor‐Doped, Monocrystalline SrTiO3 . / Fleischer, Maximilian; Meixner, H.; Tragut, Christian.

In: Journal of the American Ceramic Society, Vol. 75, No. 6, 1992, p. 1666-1668.

Research output: Contribution to journalArticle

Fleischer, Maximilian ; Meixner, H. ; Tragut, Christian. / Hole Mobility in Acceptor‐Doped, Monocrystalline SrTiO3 In: Journal of the American Ceramic Society. 1992 ; Vol. 75, No. 6. pp. 1666-1668.
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