Highly conductive epitaxial ZnO layers deposited by atomic layer deposition

Zs Baji, Z. Lábadi, G. Molnár, B. Pécz, K. Vad, Z. Horváth, P. Szabó, T. Nagata, J. Volk

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The possibility of depositing conductive epitaxial layers with atomic layer deposition has been examined. Epitaxial ZnO layers were grown on GaN and doped with Al. The resistivity of the epitaxial layers is between 0.6 and 2* 10-4 Ω cm with both the mobilities and the carrier concentrations being very high. The source of the high carrier concentration was found to be a combination of Al and Ga doping, the latter resulted by Ga atoms diffusing into the ZnO from the GaN substrate.

Original languageEnglish
Pages (from-to)485-489
Number of pages5
JournalThin Solid Films
Volume562
DOIs
Publication statusPublished - Jul 1 2014

Fingerprint

Atomic layer deposition
Epitaxial layers
atomic layer epitaxy
Carrier concentration
Doping (additives)
Atoms
electrical resistivity
Substrates
atoms

Keywords

  • Atomic layer deposition
  • Conductive layers
  • Epitaxy
  • Gallium doping
  • Zinc oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Highly conductive epitaxial ZnO layers deposited by atomic layer deposition. / Baji, Zs; Lábadi, Z.; Molnár, G.; Pécz, B.; Vad, K.; Horváth, Z.; Szabó, P.; Nagata, T.; Volk, J.

In: Thin Solid Films, Vol. 562, 01.07.2014, p. 485-489.

Research output: Contribution to journalArticle

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AU - Horváth, Z.

AU - Szabó, P.

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