High temperature oxygen sensor based on sputtered cerium oxide

J. Gerblinger, W. Lohwasser, U. Lampe, H. Meixner

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

The chemical stability at high temperature and the high diffusion coefficient of oxygen vacancies are reasons for selecting CeO2 as a promising material for fast oxygen sensors at high temperatures. To reach short response times of oxygen sensors based on semiconducting metal oxides it is necessary to realize the sensitive material in the form of a thin film. This can be done using the sputter process. Sputtered thin films of CeO2 like polycrystalline bulk materials present pure n-conducting behaviour in the temperature range 800-1100 °C. Above temperature of 900 °C response times of the sensitive material shorter than 50 ms due to a change in the oxygen partial pressure can be reached. The cross-sensitivities of CeO2 thin films on reactive gases like H2 and CH4 have been investigated.

Original languageEnglish
Pages (from-to)93-96
Number of pages4
JournalSensors and Actuators, B: Chemical
Volume26
Issue number1-3
Publication statusPublished - 1995

Fingerprint

Oxygen sensors
cerium oxides
Temperature sensors
Cerium
Oxides
sensors
oxygen
Thin films
thin films
Temperature
Chemical stability
Oxygen vacancies
Partial pressure
partial pressure
metal oxides
diffusion coefficient
Gases
Metals
Oxygen
conduction

Keywords

  • Cerium oxide
  • High temperature oxygen sensor
  • Oxygen sensor

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Analytical Chemistry
  • Electrochemistry

Cite this

High temperature oxygen sensor based on sputtered cerium oxide. / Gerblinger, J.; Lohwasser, W.; Lampe, U.; Meixner, H.

In: Sensors and Actuators, B: Chemical, Vol. 26, No. 1-3, 1995, p. 93-96.

Research output: Contribution to journalArticle

Gerblinger, J, Lohwasser, W, Lampe, U & Meixner, H 1995, 'High temperature oxygen sensor based on sputtered cerium oxide', Sensors and Actuators, B: Chemical, vol. 26, no. 1-3, pp. 93-96.
Gerblinger, J. ; Lohwasser, W. ; Lampe, U. ; Meixner, H. / High temperature oxygen sensor based on sputtered cerium oxide. In: Sensors and Actuators, B: Chemical. 1995 ; Vol. 26, No. 1-3. pp. 93-96.
@article{100931f10e9a4866b15ea8b1f240952f,
title = "High temperature oxygen sensor based on sputtered cerium oxide",
abstract = "The chemical stability at high temperature and the high diffusion coefficient of oxygen vacancies are reasons for selecting CeO2 as a promising material for fast oxygen sensors at high temperatures. To reach short response times of oxygen sensors based on semiconducting metal oxides it is necessary to realize the sensitive material in the form of a thin film. This can be done using the sputter process. Sputtered thin films of CeO2 like polycrystalline bulk materials present pure n-conducting behaviour in the temperature range 800-1100 °C. Above temperature of 900 °C response times of the sensitive material shorter than 50 ms due to a change in the oxygen partial pressure can be reached. The cross-sensitivities of CeO2 thin films on reactive gases like H2 and CH4 have been investigated.",
keywords = "Cerium oxide, High temperature oxygen sensor, Oxygen sensor",
author = "J. Gerblinger and W. Lohwasser and U. Lampe and H. Meixner",
year = "1995",
language = "English",
volume = "26",
pages = "93--96",
journal = "Sensors and Actuators, B: Chemical",
issn = "0925-4005",
publisher = "Elsevier",
number = "1-3",

}

TY - JOUR

T1 - High temperature oxygen sensor based on sputtered cerium oxide

AU - Gerblinger, J.

AU - Lohwasser, W.

AU - Lampe, U.

AU - Meixner, H.

PY - 1995

Y1 - 1995

N2 - The chemical stability at high temperature and the high diffusion coefficient of oxygen vacancies are reasons for selecting CeO2 as a promising material for fast oxygen sensors at high temperatures. To reach short response times of oxygen sensors based on semiconducting metal oxides it is necessary to realize the sensitive material in the form of a thin film. This can be done using the sputter process. Sputtered thin films of CeO2 like polycrystalline bulk materials present pure n-conducting behaviour in the temperature range 800-1100 °C. Above temperature of 900 °C response times of the sensitive material shorter than 50 ms due to a change in the oxygen partial pressure can be reached. The cross-sensitivities of CeO2 thin films on reactive gases like H2 and CH4 have been investigated.

AB - The chemical stability at high temperature and the high diffusion coefficient of oxygen vacancies are reasons for selecting CeO2 as a promising material for fast oxygen sensors at high temperatures. To reach short response times of oxygen sensors based on semiconducting metal oxides it is necessary to realize the sensitive material in the form of a thin film. This can be done using the sputter process. Sputtered thin films of CeO2 like polycrystalline bulk materials present pure n-conducting behaviour in the temperature range 800-1100 °C. Above temperature of 900 °C response times of the sensitive material shorter than 50 ms due to a change in the oxygen partial pressure can be reached. The cross-sensitivities of CeO2 thin films on reactive gases like H2 and CH4 have been investigated.

KW - Cerium oxide

KW - High temperature oxygen sensor

KW - Oxygen sensor

UR - http://www.scopus.com/inward/record.url?scp=0029306435&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029306435&partnerID=8YFLogxK

M3 - Article

VL - 26

SP - 93

EP - 96

JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

SN - 0925-4005

IS - 1-3

ER -