Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050 °C on n-type semi-conducting BaSnO3 ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 102 and 105 Pa and of temperature was investigated. At temperatures below 900 °C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900 °C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO3.
|Number of pages||4|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - Aug 1 1997|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry