High-temperature Hall measurements on BaSnO3 ceramics

Bernhard Ostrick, Maximilian Fleischer, Hans Meixner

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32 Citations (Scopus)


Simultaneous Hall and conductivity measurements were performed in situ between 650° and 1050 °C on n-type semi-conducting BaSnO3 ceramics. The variation of the Hall mobility and the Hall carrier density as a function of oxygen partial pressure between 102 and 105 Pa and of temperature was investigated. At temperatures below 900 °C the conductivity exhibits a dependence on temperature and oxygen partial pressure which is mainly determined by variations of the Hall mobility. Above 900 °C most of the significant dependence is due to a variation in carrier density. Furthermore, a simple defect model assuming doubly ionized oxygen vacancies and acceptor impurities is discussed for BaSnO3.

Original languageEnglish
Pages (from-to)2153-2156
Number of pages4
JournalJournal of the American Ceramic Society
Issue number8
Publication statusPublished - Aug 1 1997

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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