High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production

C. Major, G. Juhasz, Z. Labadi, M. Fried

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Non-destructive analyzing tools are needed at all stages of thin film process-development, especially photovoltaic (PV) development, and on production lines. In the case of thin films, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity are important parameters. Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels in developing labs but it is slow in the on-line mode. Last years [M. Fried et al, Thin Solid Films 519, 2730 (2011); 571, 345 (2014)], a new instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl=350-1000 nm) data. Prototypes have built for 300-600-900 mm nominal width different structures (poly-Si/c-Si, ZnO/Mo, a-Si/Al, a-Si/glass) on rigid substrates. Thin layers (ZnO/a-Si:H;) on plastic foil substrates were also investigated in roll to roll operation, measurements and results of different structures are presented.

Original languageEnglish
Title of host publication2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479979448
DOIs
Publication statusPublished - Dec 14 2015
Event42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States
Duration: Jun 14 2015Jun 19 2015

Other

Other42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
CountryUnited States
CityNew Orleans
Period6/14/156/19/15

Fingerprint

Spectroscopic ellipsometry
Thin films
Monitoring
Substrates
Polysilicon
Metal foil
Optical properties
Plastics
Glass
Microstructure
Chemical analysis

Keywords

  • ellipsometry
  • photovoltaic cells
  • thin film

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Major, C., Juhasz, G., Labadi, Z., & Fried, M. (2015). High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 [7355640] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355640

High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production. / Major, C.; Juhasz, G.; Labadi, Z.; Fried, M.

2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355640.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Major, C, Juhasz, G, Labadi, Z & Fried, M 2015, High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355640, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355640
Major C, Juhasz G, Labadi Z, Fried M. High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355640 https://doi.org/10.1109/PVSC.2015.7355640
Major, C. ; Juhasz, G. ; Labadi, Z. ; Fried, M. / High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
@inproceedings{baef2d9cd38d4cff8f790d72f958d33b,
title = "High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production",
abstract = "Non-destructive analyzing tools are needed at all stages of thin film process-development, especially photovoltaic (PV) development, and on production lines. In the case of thin films, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity are important parameters. Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels in developing labs but it is slow in the on-line mode. Last years [M. Fried et al, Thin Solid Films 519, 2730 (2011); 571, 345 (2014)], a new instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl=350-1000 nm) data. Prototypes have built for 300-600-900 mm nominal width different structures (poly-Si/c-Si, ZnO/Mo, a-Si/Al, a-Si/glass) on rigid substrates. Thin layers (ZnO/a-Si:H;) on plastic foil substrates were also investigated in roll to roll operation, measurements and results of different structures are presented.",
keywords = "ellipsometry, photovoltaic cells, thin film",
author = "C. Major and G. Juhasz and Z. Labadi and M. Fried",
year = "2015",
month = "12",
day = "14",
doi = "10.1109/PVSC.2015.7355640",
language = "English",
isbn = "9781479979448",
booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - GEN

T1 - High speed spectroscopic ellipsometry technique for on-line monitoring in large area thin layer production

AU - Major, C.

AU - Juhasz, G.

AU - Labadi, Z.

AU - Fried, M.

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Non-destructive analyzing tools are needed at all stages of thin film process-development, especially photovoltaic (PV) development, and on production lines. In the case of thin films, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity are important parameters. Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels in developing labs but it is slow in the on-line mode. Last years [M. Fried et al, Thin Solid Films 519, 2730 (2011); 571, 345 (2014)], a new instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl=350-1000 nm) data. Prototypes have built for 300-600-900 mm nominal width different structures (poly-Si/c-Si, ZnO/Mo, a-Si/Al, a-Si/glass) on rigid substrates. Thin layers (ZnO/a-Si:H;) on plastic foil substrates were also investigated in roll to roll operation, measurements and results of different structures are presented.

AB - Non-destructive analyzing tools are needed at all stages of thin film process-development, especially photovoltaic (PV) development, and on production lines. In the case of thin films, layer thicknesses, micro-structure, composition, layer optical properties, and their uniformity are important parameters. Off-line point-by-point mapping can be effective for characterization of non-uniformities in full scale PV panels in developing labs but it is slow in the on-line mode. Last years [M. Fried et al, Thin Solid Films 519, 2730 (2011); 571, 345 (2014)], a new instrumentation was developed that provides a line image of spectroscopic ellipsometry (wl=350-1000 nm) data. Prototypes have built for 300-600-900 mm nominal width different structures (poly-Si/c-Si, ZnO/Mo, a-Si/Al, a-Si/glass) on rigid substrates. Thin layers (ZnO/a-Si:H;) on plastic foil substrates were also investigated in roll to roll operation, measurements and results of different structures are presented.

KW - ellipsometry

KW - photovoltaic cells

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=84961637971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84961637971&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2015.7355640

DO - 10.1109/PVSC.2015.7355640

M3 - Conference contribution

AN - SCOPUS:84961637971

SN - 9781479979448

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -