High sensitivity optical characterization of thin films with embedded Si nanocrystals

P. Petrik, E. Agocs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical techniques that use a spectral range of photon energies larger than the band gap are very sensitive for structural characterization of semiconductor nanocrystals. Techniques that can measure the change of polarization during reflection from bulk or thin film samples reveal high sensitivity for both the layer thickness and the refractive index. From one spectroscopic ellipsometric measurement performed in a range of 0.7-6.5 eV within 1 s using a standard multi-channel ellipsometer not only the thickness and the dielectric function of the film, but a range of derived material properties like the crystallinity or the size and volume fraction of nanocrystals can be determined indirectly. The quality of the measurement is not any more a question of instrumentation, but rather a question of interpretation and proper modeling. In this paper we summarize what parameters can be determined, and we present a method for the reliable fitting of numerous parameters.

Original languageEnglish
Title of host publicationNanocrystal Embedded Dielectrics for Electronic and Photonic Devices
Pages43-52
Number of pages10
Edition4
DOIs
Publication statusPublished - Oct 21 2013
EventNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 16 2013

Publication series

NameECS Transactions
Number4
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/16/13

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Petrik, P., & Agocs, E. (2013). High sensitivity optical characterization of thin films with embedded Si nanocrystals. In Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices (4 ed., pp. 43-52). (ECS Transactions; Vol. 53, No. 4). https://doi.org/10.1149/05304.0043ecst