High sensitivity optical characterization of thin films with embedded Si nanocrystals

P. Petrik, E. Agocs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical techniques that use a spectral range of photon energies larger than the band gap are very sensitive for structural characterization of semiconductor nanocrystals. Techniques that can measure the change of polarization during reflection from bulk or thin film samples reveal high sensitivity for both the layer thickness and the refractive index. From one spectroscopic ellipsometric measurement performed in a range of 0.7-6.5 eV within 1 s using a standard multi-channel ellipsometer not only the thickness and the dielectric function of the film, but a range of derived material properties like the crystallinity or the size and volume fraction of nanocrystals can be determined indirectly. The quality of the measurement is not any more a question of instrumentation, but rather a question of interpretation and proper modeling. In this paper we summarize what parameters can be determined, and we present a method for the reliable fitting of numerous parameters.

Original languageEnglish
Title of host publicationECS Transactions
Pages43-52
Number of pages10
Volume53
Edition4
DOIs
Publication statusPublished - 2013
EventNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting - Toronto, ON, Canada
Duration: May 12 2013May 16 2013

Other

OtherNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period5/12/135/16/13

Fingerprint

Nanocrystals
Thin films
Volume fraction
Refractive index
Materials properties
Energy gap
Photons
Polarization
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

High sensitivity optical characterization of thin films with embedded Si nanocrystals. / Petrik, P.; Agocs, E.

ECS Transactions. Vol. 53 4. ed. 2013. p. 43-52.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Petrik, P & Agocs, E 2013, High sensitivity optical characterization of thin films with embedded Si nanocrystals. in ECS Transactions. 4 edn, vol. 53, pp. 43-52, Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 223rd ECS Meeting, Toronto, ON, Canada, 5/12/13. https://doi.org/10.1149/05304.0043ecst
Petrik, P. ; Agocs, E. / High sensitivity optical characterization of thin films with embedded Si nanocrystals. ECS Transactions. Vol. 53 4. ed. 2013. pp. 43-52
@inproceedings{5d1ad133f58a41148d18c9d926d211f6,
title = "High sensitivity optical characterization of thin films with embedded Si nanocrystals",
abstract = "Optical techniques that use a spectral range of photon energies larger than the band gap are very sensitive for structural characterization of semiconductor nanocrystals. Techniques that can measure the change of polarization during reflection from bulk or thin film samples reveal high sensitivity for both the layer thickness and the refractive index. From one spectroscopic ellipsometric measurement performed in a range of 0.7-6.5 eV within 1 s using a standard multi-channel ellipsometer not only the thickness and the dielectric function of the film, but a range of derived material properties like the crystallinity or the size and volume fraction of nanocrystals can be determined indirectly. The quality of the measurement is not any more a question of instrumentation, but rather a question of interpretation and proper modeling. In this paper we summarize what parameters can be determined, and we present a method for the reliable fitting of numerous parameters.",
author = "P. Petrik and E. Agocs",
year = "2013",
doi = "10.1149/05304.0043ecst",
language = "English",
isbn = "9781607683773",
volume = "53",
pages = "43--52",
booktitle = "ECS Transactions",
edition = "4",

}

TY - GEN

T1 - High sensitivity optical characterization of thin films with embedded Si nanocrystals

AU - Petrik, P.

AU - Agocs, E.

PY - 2013

Y1 - 2013

N2 - Optical techniques that use a spectral range of photon energies larger than the band gap are very sensitive for structural characterization of semiconductor nanocrystals. Techniques that can measure the change of polarization during reflection from bulk or thin film samples reveal high sensitivity for both the layer thickness and the refractive index. From one spectroscopic ellipsometric measurement performed in a range of 0.7-6.5 eV within 1 s using a standard multi-channel ellipsometer not only the thickness and the dielectric function of the film, but a range of derived material properties like the crystallinity or the size and volume fraction of nanocrystals can be determined indirectly. The quality of the measurement is not any more a question of instrumentation, but rather a question of interpretation and proper modeling. In this paper we summarize what parameters can be determined, and we present a method for the reliable fitting of numerous parameters.

AB - Optical techniques that use a spectral range of photon energies larger than the band gap are very sensitive for structural characterization of semiconductor nanocrystals. Techniques that can measure the change of polarization during reflection from bulk or thin film samples reveal high sensitivity for both the layer thickness and the refractive index. From one spectroscopic ellipsometric measurement performed in a range of 0.7-6.5 eV within 1 s using a standard multi-channel ellipsometer not only the thickness and the dielectric function of the film, but a range of derived material properties like the crystallinity or the size and volume fraction of nanocrystals can be determined indirectly. The quality of the measurement is not any more a question of instrumentation, but rather a question of interpretation and proper modeling. In this paper we summarize what parameters can be determined, and we present a method for the reliable fitting of numerous parameters.

UR - http://www.scopus.com/inward/record.url?scp=84885628381&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84885628381&partnerID=8YFLogxK

U2 - 10.1149/05304.0043ecst

DO - 10.1149/05304.0043ecst

M3 - Conference contribution

AN - SCOPUS:84885628381

SN - 9781607683773

VL - 53

SP - 43

EP - 52

BT - ECS Transactions

ER -