High resolution photoemission and Auger parameter studies of electronic structure of TiN oxides

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Abstract

The electronic structure of metallic Sn, poly crystalline Sn oxides, and (110) natural single crystal SnO2 (cassiterite) was studied by high resolution measurements of core and valence photoemission, photoinduced Auger spectra, and energy loss spectra. The advantage of in vacuo scraping in obtaining SnO surfaces is shown in comparison with surface cleaning by ion sputtering. Valence band x-ray photoemission spectroscopy spectra are interpreted by a cluster-type discrete variational Xa molecular orbital model, revealing the change in the electronic structure which leads to an increased conductivity. The use of the Auger parameter approach in gaining information on the initial and final state effects, ligand polarizability, and final state hole-hole repulsion energies are demonstrated for the case of TiN oxides.

Original languageEnglish
Pages (from-to)1382-1388
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
Publication statusPublished - May 1995

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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