Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength λ = 3. 3-3. 4 μm is as high as 22. 3%. The optical emission power of the LEDs is 140 μW at a current of 1 A in the quasi-continuous mode and reaches a value of 5. 5 mW at a current of 9 A in the pulsed mode.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics