High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)

A. P. Astakhova, A. S. Golovin, N. D. Il'inskaya, K. V. Kalinina, S. S. Kizhayev, O. Yu Serebrennikova, N. D. Stoyanov, Z. Horváth, Yu P. Yakovlev

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength λ = 3. 3-3. 4 μm is as high as 22. 3%. The optical emission power of the LEDs is 140 μW at a current of 1 A in the quasi-continuous mode and reaches a value of 5. 5 mW at a current of 9 A in the pulsed mode.

Original languageEnglish
Pages (from-to)263-268
Number of pages6
JournalSemiconductors
Volume44
Issue number2
DOIs
Publication statusPublished - Feb 2010

Fingerprint

Methane
Light emitting diodes
Heterojunctions
light emitting diodes
methane
Spectroscopy
spectroscopy
Quantum efficiency
quantum efficiency
Vapor phase epitaxy
Epitaxial layers
Electroluminescence
radiative recombination
Substrates
vapor phase epitaxy
electroluminescence
light emission
Metals
chips
indium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Astakhova, A. P., Golovin, A. S., Il'inskaya, N. D., Kalinina, K. V., Kizhayev, S. S., Serebrennikova, O. Y., ... Yakovlev, Y. P. (2010). High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm). Semiconductors, 44(2), 263-268. https://doi.org/10.1134/S1063782610020235

High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm). / Astakhova, A. P.; Golovin, A. S.; Il'inskaya, N. D.; Kalinina, K. V.; Kizhayev, S. S.; Serebrennikova, O. Yu; Stoyanov, N. D.; Horváth, Z.; Yakovlev, Yu P.

In: Semiconductors, Vol. 44, No. 2, 02.2010, p. 263-268.

Research output: Contribution to journalArticle

Astakhova, AP, Golovin, AS, Il'inskaya, ND, Kalinina, KV, Kizhayev, SS, Serebrennikova, OY, Stoyanov, ND, Horváth, Z & Yakovlev, YP 2010, 'High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)', Semiconductors, vol. 44, no. 2, pp. 263-268. https://doi.org/10.1134/S1063782610020235
Astakhova AP, Golovin AS, Il'inskaya ND, Kalinina KV, Kizhayev SS, Serebrennikova OY et al. High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm). Semiconductors. 2010 Feb;44(2):263-268. https://doi.org/10.1134/S1063782610020235
Astakhova, A. P. ; Golovin, A. S. ; Il'inskaya, N. D. ; Kalinina, K. V. ; Kizhayev, S. S. ; Serebrennikova, O. Yu ; Stoyanov, N. D. ; Horváth, Z. ; Yakovlev, Yu P. / High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm). In: Semiconductors. 2010 ; Vol. 44, No. 2. pp. 263-268.
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