High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm)

A. P. Astakhova, A. S. Golovin, N. D. Il'inskaya, K. V. Kalinina, S. S. Kizhayev, O. Yu Serebrennikova, N. D. Stoyanov, Zs J. Horvath, Yu P. Yakovlev

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Abstract

Two designs of light-emitting diodes (LEDs) based on InAsSbP/InAs/InAsSbP double hetero-structures grown by metal-organic vapor phase epitaxy on p- and n-InAs substrates have been studied. The current-voltage and electroluminescence characteristics of the LEDs are analyzed. It is shown that the LED design with a light-emitting crystal (chip) mounted with the epitaxial layer down on the LED case and emission extracted through the n-InAs substrate provides better heat removal. As a result, the spectral characteristics remain stable at increased injection currents and the quantum efficiency of radiative recombination is higher. The internal quantum efficiency of light-em itting structures with an emission wavelength λ = 3. 3-3. 4 μm is as high as 22. 3%. The optical emission power of the LEDs is 140 μW at a current of 1 A in the quasi-continuous mode and reaches a value of 5. 5 mW at a current of 9 A in the pulsed mode.

Original languageEnglish
Pages (from-to)263-268
Number of pages6
JournalSemiconductors
Volume44
Issue number2
DOIs
Publication statusPublished - Feb 1 2010

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Astakhova, A. P., Golovin, A. S., Il'inskaya, N. D., Kalinina, K. V., Kizhayev, S. S., Serebrennikova, O. Y., Stoyanov, N. D., Horvath, Z. J., & Yakovlev, Y. P. (2010). High-power InAs/InAsSbP heterostructure leds for methane spectroscopy (λ ≈ 3.3 μm). Semiconductors, 44(2), 263-268. https://doi.org/10.1134/S1063782610020235