High-fluence Si-implanted diamond

Formation of SiC nanocrystals and sheet resistance

H. Weishart, V. Heera, F. Eichhorn, B. Pécz, A. Barna, W. Skorupa

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A study on high temperature implantation of Si into diamond leading to the formation of 3C-SiC nanocrystals in a buried layer was presented. The sheet resistance of the samples was measured as function of temperature by four point probe technique in van-der-Pauw geometry. Defects, like vacancies and graphitic inclusions, determine the electrical properties of the SiC-containing buried layer in the diamonds implanted above a fluence of 5.3×1017 cm-2.

Original languageEnglish
Pages (from-to)1195-1204
Number of pages10
JournalJournal of Applied Physics
Volume94
Issue number2
DOIs
Publication statusPublished - Jul 15 2003

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nanocrystals
fluence
diamonds
trucks
implantation
electrical properties
inclusions
probes
defects
geometry
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

High-fluence Si-implanted diamond : Formation of SiC nanocrystals and sheet resistance. / Weishart, H.; Heera, V.; Eichhorn, F.; Pécz, B.; Barna, A.; Skorupa, W.

In: Journal of Applied Physics, Vol. 94, No. 2, 15.07.2003, p. 1195-1204.

Research output: Contribution to journalArticle

Weishart, H. ; Heera, V. ; Eichhorn, F. ; Pécz, B. ; Barna, A. ; Skorupa, W. / High-fluence Si-implanted diamond : Formation of SiC nanocrystals and sheet resistance. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 2. pp. 1195-1204.
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