A study on high temperature implantation of Si into diamond leading to the formation of 3C-SiC nanocrystals in a buried layer was presented. The sheet resistance of the samples was measured as function of temperature by four point probe technique in van-der-Pauw geometry. Defects, like vacancies and graphitic inclusions, determine the electrical properties of the SiC-containing buried layer in the diamonds implanted above a fluence of 5.3×1017 cm-2.
ASJC Scopus subject areas
- Physics and Astronomy(all)