High-energy terahertz pulses from semiconductors pumped beyond the three-photon absorption edge

Gy Polónyi, B. Monoszlai, G. Gäumann, E. J. Rohwer, G. Andriukaitis, T. Balciunas, A. Pugzlys, A. Baltuska, T. Feurer, J. Hebling, J. A. Fülöp

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Abstract

A new route to efficient generation of THz pulses with high-energy was demonstrated using semiconductor materials pumped at an infrared wavelength sufficiently long to suppress both two- and three-photon absorption and associated free-carrier absorption at THz frequencies. For pumping beyond the three-photon absorption edge, the THz generation efficiency for optical rectification of femtosecond laser pulses with tilted intensity front in ZnTe was shown to increase 3.5 times, as compared to pumping below the absorption edge. The four-photon absorption coefficient of ZnTe was estimated to be β4=(4±1)×10-5 cm5/GW3. THz pulses with 14 μJ energy were generated with as high as 0.7% efficiency in ZnTe pumped at 1.7 μm. It is shown that scaling the THz pulse energy to the mJ level by increasing the pump spot size and pump pulse energy is feasible.

Original languageEnglish
Pages (from-to)23872-23882
Number of pages11
JournalOptics Express
Volume24
Issue number21
DOIs
Publication statusPublished - Oct 17 2016

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Polónyi, G., Monoszlai, B., Gäumann, G., Rohwer, E. J., Andriukaitis, G., Balciunas, T., Pugzlys, A., Baltuska, A., Feurer, T., Hebling, J., & Fülöp, J. A. (2016). High-energy terahertz pulses from semiconductors pumped beyond the three-photon absorption edge. Optics Express, 24(21), 23872-23882. https://doi.org/10.1364/OE.24.023872