High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen

L. Frey, S. Bogen, L. Gong, W. Jung, H. Ryssel, J. Gyulai

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

A new high energy ion implanter for research and development in semiconductor technology was put into operation at the Fraunhofer Institute in Erlangen. The system is used for generation of ion beams in the energy range from 100 keV to more than 6 MeV with currents up to 100 μA. A large variety of ion species can be implanted into silicon wafers with diameters up to 200 mm (with cassette-to-cassette loading up to 150 mm). The performance characteristics of the system are described with special emphasis on the end stations. In a first series of experiments, the range distributions of boron, phosphorus and arsenic in silicon have been measured for energies from 0.2 MeV to 10 MeV in order to get a data set for future applications. The profiles are compared to simulated data. First experimental results on lateral distribution of the dopant species are presented.

Original languageEnglish
Pages (from-to)410-415
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, B
Volume62
Issue number3
DOIs
Publication statusPublished - Jan 2 1992

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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