High dose implantation in 6H-SiC

V. Heera, W. Skorupa, J. Stoemenos, B. Pécz

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The phase formation in 6H-SiC due to high dose implantation was studied as function of temperature by means of transmission electron microscopy. Two examples demonstrate the feasibility of ion beam synthesis of crystalline phases in 6H-SiC which are epitaxially aligned with the surrounding matrix. In the first example Al+ ions were implanted up to concentrations of 15 at% at temperatures between RT and 800°C. The precipitation of carbon phases due to high dose C+ implantation in 6H-SiC at temperatures between 300°C and 900°C was investigated in the second example.

Original languageEnglish
Pages (from-to)579-582
Number of pages4
JournalMaterials Science Forum
Volume353-356
DOIs
Publication statusPublished - 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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