High dose implantation in 6H-SiC

V. Heera, W. Skorupa, J. Stoemenos, B. Pécz

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The phase formation in 6H-SiC due to high dose implantation was studied as function of temperature by means of transmission electron microscopy. Two examples demonstrate the feasibility of ion beam synthesis of crystalline phases in 6H-SiC which are epitaxially aligned with the surrounding matrix. In the first example Al+ ions were implanted up to concentrations of 15 at% at temperatures between RT and 800°C. The precipitation of carbon phases due to high dose C+ implantation in 6H-SiC at temperatures between 300°C and 900°C was investigated in the second example.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages579-582
Number of pages4
Volume353-356
Publication statusPublished - 2001

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Temperature
Ion beams
Carbon
Ions
Crystalline materials
Transmission electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Heera, V., Skorupa, W., Stoemenos, J., & Pécz, B. (2001). High dose implantation in 6H-SiC. In Materials Science Forum (Vol. 353-356, pp. 579-582)

High dose implantation in 6H-SiC. / Heera, V.; Skorupa, W.; Stoemenos, J.; Pécz, B.

Materials Science Forum. Vol. 353-356 2001. p. 579-582.

Research output: Chapter in Book/Report/Conference proceedingChapter

Heera, V, Skorupa, W, Stoemenos, J & Pécz, B 2001, High dose implantation in 6H-SiC. in Materials Science Forum. vol. 353-356, pp. 579-582.
Heera V, Skorupa W, Stoemenos J, Pécz B. High dose implantation in 6H-SiC. In Materials Science Forum. Vol. 353-356. 2001. p. 579-582
Heera, V. ; Skorupa, W. ; Stoemenos, J. ; Pécz, B. / High dose implantation in 6H-SiC. Materials Science Forum. Vol. 353-356 2001. pp. 579-582
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