High-dose Ge implantation into 〈100〉 Si

G. Mezey, S. M. Matteson, J. Gyulai

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Abstract

Annealing behavior of radiation damage formed by the implantation of 75Ge+ ions into silicon was measured by channelling, with concentrations of germanium up to 14 at.% in 〈100〉 Si. At higher concentrations after annealing residual damage was located both at the interface of the damaged and undamaged crystal and at the surface. The interface defect was attributed to lattice mismatch. As for the surface defects, despite reasonable implantation conditions, the effect of recoiled oxygen or carbon cannot be ruled out. The kinetics of regrowth was not affected by the presence of Ge atoms. Apart from atoms is stable damaged regions, the Ge atoms showed highly substitutional character.

Original languageEnglish
Pages (from-to)587-590
Number of pages4
JournalNuclear instruments and methods
Volume182-183
Issue numberPART 2
DOIs
Publication statusPublished - Jan 1 1981

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ASJC Scopus subject areas

  • Medicine(all)

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