Heteroepitaxial sputtered Ge on Si (100): Nanostructure and interface morphology

S. M. Pietralunga, M. Feré, M. Lanata, D. Piccinin, G. Radnóczi, F. Misják, A. Lamperti, M. Martinelli, P. M. Ossi

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Abstract

Epitaxial growth of Ge thin films onto (100) silicon by DC-Pulsed Magnetron Sputtering was realized and proved by X-ray and electron diffraction. Transmission and high-resolution electron microscopy across the interface region directly confirmed a high degree of epitaxy and show that planar defects and threading dislocations are the relevant lattice imperfections. Electron microscopy shows that a post-deposition rapid thermal annealing process, up to 673 K, is effective to defect annihilation. The films grow single crystalline, slightly misoriented, below 0.1 degrees. A weak roughness around 0.6 nm, was measured both at the Ge-Si interface and at the film surface. The Ge films grown onto n-type Si show the rectifying electrical behaviour typical of p-type semiconductors.

Original languageEnglish
Article number28005
JournalEurophysics Letters
Volume88
Issue number2
DOIs
Publication statusPublished - Oct 1 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Pietralunga, S. M., Feré, M., Lanata, M., Piccinin, D., Radnóczi, G., Misják, F., Lamperti, A., Martinelli, M., & Ossi, P. M. (2009). Heteroepitaxial sputtered Ge on Si (100): Nanostructure and interface morphology. Europhysics Letters, 88(2), [28005]. https://doi.org/10.1209/0295-5075/88/28005