Heteroepitaxial growth of ZnS on GaP

I. Bertóti, M. Farkas-Jahnke, E. Lendvay, T. Németh

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14 Citations (Scopus)

Abstract

Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed.

Original languageEnglish
Pages (from-to)699-703
Number of pages5
JournalJournal of Materials Science
Volume4
Issue number8
DOIs
Publication statusPublished - Aug 1 1969

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Bertóti, I., Farkas-Jahnke, M., Lendvay, E., & Németh, T. (1969). Heteroepitaxial growth of ZnS on GaP. Journal of Materials Science, 4(8), 699-703. https://doi.org/10.1007/BF00742426