Heteroepitaxial growth of ZnS on GaP

I. Bertóti, M. Farkas-Jahnke, E. Lendvay, T. Németh

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed.

Original languageEnglish
Pages (from-to)699-703
Number of pages5
JournalJournal of Materials Science
Volume4
Issue number8
DOIs
Publication statusPublished - Aug 1969

Fingerprint

transition layers
Epitaxial layers
Epitaxial growth
Optical microscopy
Heterojunctions
polarity
Single crystals
microscopy
X ray diffraction
single crystals
diffraction
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)

Cite this

Bertóti, I., Farkas-Jahnke, M., Lendvay, E., & Németh, T. (1969). Heteroepitaxial growth of ZnS on GaP. Journal of Materials Science, 4(8), 699-703. https://doi.org/10.1007/BF00742426

Heteroepitaxial growth of ZnS on GaP. / Bertóti, I.; Farkas-Jahnke, M.; Lendvay, E.; Németh, T.

In: Journal of Materials Science, Vol. 4, No. 8, 08.1969, p. 699-703.

Research output: Contribution to journalArticle

Bertóti, I, Farkas-Jahnke, M, Lendvay, E & Németh, T 1969, 'Heteroepitaxial growth of ZnS on GaP', Journal of Materials Science, vol. 4, no. 8, pp. 699-703. https://doi.org/10.1007/BF00742426
Bertóti, I. ; Farkas-Jahnke, M. ; Lendvay, E. ; Németh, T. / Heteroepitaxial growth of ZnS on GaP. In: Journal of Materials Science. 1969 ; Vol. 4, No. 8. pp. 699-703.
@article{bcc0bbf0e88648da92ac1ad12ce85ef7,
title = "Heteroepitaxial growth of ZnS on GaP",
abstract = "Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed.",
author = "I. Bert{\'o}ti and M. Farkas-Jahnke and E. Lendvay and T. N{\'e}meth",
year = "1969",
month = "8",
doi = "10.1007/BF00742426",
language = "English",
volume = "4",
pages = "699--703",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "8",

}

TY - JOUR

T1 - Heteroepitaxial growth of ZnS on GaP

AU - Bertóti, I.

AU - Farkas-Jahnke, M.

AU - Lendvay, E.

AU - Németh, T.

PY - 1969/8

Y1 - 1969/8

N2 - Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed.

AB - Epitaxial layers of ZnS were grown on GaP single crystals by a chemical transport reaction. The growth process and the heterostructures obtained were investigated by X-ray diffraction and optical microscopy. It was found that the epitaxial overgrowth is polarity dependent. The formation of a transition layer at the interface between the ZnS and GaP was observed.

UR - http://www.scopus.com/inward/record.url?scp=0014553637&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0014553637&partnerID=8YFLogxK

U2 - 10.1007/BF00742426

DO - 10.1007/BF00742426

M3 - Article

AN - SCOPUS:0014553637

VL - 4

SP - 699

EP - 703

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 8

ER -