He+ and Ar+ bombardment induced chemical changes in Cr-O-Si layers

I. Bertóti, A. Tóth, M. Mohai, R. Kelly, G. Marletta

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7 Citations (Scopus)

Abstract

The effects of 2 keV He+ and Ar+ bombardment on the surface composition and on the short range chemical structure of sputter deposited amorphous Cr-O-Si layers (with approx. 1:1:1 atomic ratio) have been studied by XPS. It was found that Ar+ bombardment causes an essentially complete reduction of chromium to metallic state (Cr0) whereas it was partly oxidized in the as-received sample. At the same time about 30% of the oxidized silicon is converted to Si0 which is stabilized by forming Si-Cr bonds. He+ bombardment, on the contrary, leads to the disruption of Si-Cr bonds formed by the preceding Ar+ bombardment, converting Cr0 and Si0 essentially to Cr3+-O, Cr4+-O and Si4+-O, and, at the same time raises the surface oxygen concentration up to three times of the nominal bulk value. The observed transformations are discussed, in connection with the great differences in energy deposition, in terms of direct energy transfer and of ion induced diffusion, together with a significant contribution from thermodynamic driving forces.

Original languageEnglish
Pages (from-to)200-206
Number of pages7
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume116
Issue number1-4
Publication statusPublished - Aug 1996

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Chromium
Silicon
Surface structure
Energy transfer
bombardment
X ray photoelectron spectroscopy
Thermodynamics
Ions
Oxygen
chromium
energy transfer
thermodynamics
causes
silicon
oxygen
ions
energy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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abstract = "The effects of 2 keV He+ and Ar+ bombardment on the surface composition and on the short range chemical structure of sputter deposited amorphous Cr-O-Si layers (with approx. 1:1:1 atomic ratio) have been studied by XPS. It was found that Ar+ bombardment causes an essentially complete reduction of chromium to metallic state (Cr0) whereas it was partly oxidized in the as-received sample. At the same time about 30{\%} of the oxidized silicon is converted to Si0 which is stabilized by forming Si-Cr bonds. He+ bombardment, on the contrary, leads to the disruption of Si-Cr bonds formed by the preceding Ar+ bombardment, converting Cr0 and Si0 essentially to Cr3+-O, Cr4+-O and Si4+-O, and, at the same time raises the surface oxygen concentration up to three times of the nominal bulk value. The observed transformations are discussed, in connection with the great differences in energy deposition, in terms of direct energy transfer and of ion induced diffusion, together with a significant contribution from thermodynamic driving forces.",
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TY - JOUR

T1 - He+ and Ar+ bombardment induced chemical changes in Cr-O-Si layers

AU - Bertóti, I.

AU - Tóth, A.

AU - Mohai, M.

AU - Kelly, R.

AU - Marletta, G.

PY - 1996/8

Y1 - 1996/8

N2 - The effects of 2 keV He+ and Ar+ bombardment on the surface composition and on the short range chemical structure of sputter deposited amorphous Cr-O-Si layers (with approx. 1:1:1 atomic ratio) have been studied by XPS. It was found that Ar+ bombardment causes an essentially complete reduction of chromium to metallic state (Cr0) whereas it was partly oxidized in the as-received sample. At the same time about 30% of the oxidized silicon is converted to Si0 which is stabilized by forming Si-Cr bonds. He+ bombardment, on the contrary, leads to the disruption of Si-Cr bonds formed by the preceding Ar+ bombardment, converting Cr0 and Si0 essentially to Cr3+-O, Cr4+-O and Si4+-O, and, at the same time raises the surface oxygen concentration up to three times of the nominal bulk value. The observed transformations are discussed, in connection with the great differences in energy deposition, in terms of direct energy transfer and of ion induced diffusion, together with a significant contribution from thermodynamic driving forces.

AB - The effects of 2 keV He+ and Ar+ bombardment on the surface composition and on the short range chemical structure of sputter deposited amorphous Cr-O-Si layers (with approx. 1:1:1 atomic ratio) have been studied by XPS. It was found that Ar+ bombardment causes an essentially complete reduction of chromium to metallic state (Cr0) whereas it was partly oxidized in the as-received sample. At the same time about 30% of the oxidized silicon is converted to Si0 which is stabilized by forming Si-Cr bonds. He+ bombardment, on the contrary, leads to the disruption of Si-Cr bonds formed by the preceding Ar+ bombardment, converting Cr0 and Si0 essentially to Cr3+-O, Cr4+-O and Si4+-O, and, at the same time raises the surface oxygen concentration up to three times of the nominal bulk value. The observed transformations are discussed, in connection with the great differences in energy deposition, in terms of direct energy transfer and of ion induced diffusion, together with a significant contribution from thermodynamic driving forces.

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