He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement

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Abstract

The damage generation of a 3.5 MeV 4He+ analyzing beam in 4H-SiC during Rutherford backscattering spectrometric (RBS) measurement was studied by channeling effect measurements (RBS/C). A dose rate dependence of the minimum yield (χmin) was found, i.e., higher damage accumulation occurs with higher dose rate. On the other hand, the dose dependence shows that in the applied dose range (≤ 3 × 1017 ions/cm2) there is an effective dose region where χmin increases with dose, whereas it almost remains unchanged outside of this range. The behavior of analyzing beam induced damage was also discussed according to RBS observations.

Original languageEnglish
Pages (from-to)424-428
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume161
DOIs
Publication statusPublished - Mar 2000

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Rutherford backscattering spectroscopy
Ion beams
backscattering
ion beams
damage
dosage
Ions
ions

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

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title = "He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement",
abstract = "The damage generation of a 3.5 MeV 4He+ analyzing beam in 4H-SiC during Rutherford backscattering spectrometric (RBS) measurement was studied by channeling effect measurements (RBS/C). A dose rate dependence of the minimum yield (χmin) was found, i.e., higher damage accumulation occurs with higher dose rate. On the other hand, the dose dependence shows that in the applied dose range (≤ 3 × 1017 ions/cm2) there is an effective dose region where χmin increases with dose, whereas it almost remains unchanged outside of this range. The behavior of analyzing beam induced damage was also discussed according to RBS observations.",
author = "Kh{\'a}nh, {N. Q.} and Z. Zolnai and T. Lohner and L. T{\'o}th and L. Dobos and J. Gyulai",
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T1 - He ion beam density effect on damage induced in SiC during Rutherford backscattering measurement

AU - Khánh, N. Q.

AU - Zolnai, Z.

AU - Lohner, T.

AU - Tóth, L.

AU - Dobos, L.

AU - Gyulai, J.

PY - 2000/3

Y1 - 2000/3

N2 - The damage generation of a 3.5 MeV 4He+ analyzing beam in 4H-SiC during Rutherford backscattering spectrometric (RBS) measurement was studied by channeling effect measurements (RBS/C). A dose rate dependence of the minimum yield (χmin) was found, i.e., higher damage accumulation occurs with higher dose rate. On the other hand, the dose dependence shows that in the applied dose range (≤ 3 × 1017 ions/cm2) there is an effective dose region where χmin increases with dose, whereas it almost remains unchanged outside of this range. The behavior of analyzing beam induced damage was also discussed according to RBS observations.

AB - The damage generation of a 3.5 MeV 4He+ analyzing beam in 4H-SiC during Rutherford backscattering spectrometric (RBS) measurement was studied by channeling effect measurements (RBS/C). A dose rate dependence of the minimum yield (χmin) was found, i.e., higher damage accumulation occurs with higher dose rate. On the other hand, the dose dependence shows that in the applied dose range (≤ 3 × 1017 ions/cm2) there is an effective dose region where χmin increases with dose, whereas it almost remains unchanged outside of this range. The behavior of analyzing beam induced damage was also discussed according to RBS observations.

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

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