He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON.

I. P. Akimchenko, V. S. Vavilov, V. V. Krasnopevtsev, Yu V. Milyutin, J. Gyulai, G. Mezey, T. Nagy

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The depth distribution of Si ions implanted with an energy of 40 keV into natural diamond crystals at room temperature is measured using 1. 8 MeV He ion backscattering. The crystalline SiC layer formation and structure ordering occur as a result of annealing at temperatures above 900 degree C. In addition, the annealing at 1200 degree C is followed by considerable changes of the relation between the components C and Si in the implanted layer due to the migration of atoms.

Original languageEnglish
Title of host publicationInst Phys Conf Ser
PublisherInst of Phys
Pages354-361
Number of pages8
Edition31
Publication statusPublished - 1977
EventRadiat Eff in Semicond, Invited and Contrib Pap from the Int Conf - Dubrovnik, Yugosl
Duration: Sep 6 1976Sep 9 1976

Other

OtherRadiat Eff in Semicond, Invited and Contrib Pap from the Int Conf
CityDubrovnik, Yugosl
Period9/6/769/9/76

Fingerprint

Infrared absorption
Backscattering
Diamonds
Annealing
Silicon
Ions
Crystalline materials
Atoms
Temperature
Crystals

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Akimchenko, I. P., Vavilov, V. S., Krasnopevtsev, V. V., Milyutin, Y. V., Gyulai, J., Mezey, G., & Nagy, T. (1977). He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON. In Inst Phys Conf Ser (31 ed., pp. 354-361). Inst of Phys.

He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON. / Akimchenko, I. P.; Vavilov, V. S.; Krasnopevtsev, V. V.; Milyutin, Yu V.; Gyulai, J.; Mezey, G.; Nagy, T.

Inst Phys Conf Ser. 31. ed. Inst of Phys, 1977. p. 354-361.

Research output: Chapter in Book/Report/Conference proceedingChapter

Akimchenko, IP, Vavilov, VS, Krasnopevtsev, VV, Milyutin, YV, Gyulai, J, Mezey, G & Nagy, T 1977, He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON. in Inst Phys Conf Ser. 31 edn, Inst of Phys, pp. 354-361, Radiat Eff in Semicond, Invited and Contrib Pap from the Int Conf, Dubrovnik, Yugosl, 9/6/76.
Akimchenko IP, Vavilov VS, Krasnopevtsev VV, Milyutin YV, Gyulai J, Mezey G et al. He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON. In Inst Phys Conf Ser. 31 ed. Inst of Phys. 1977. p. 354-361
Akimchenko, I. P. ; Vavilov, V. S. ; Krasnopevtsev, V. V. ; Milyutin, Yu V. ; Gyulai, J. ; Mezey, G. ; Nagy, T. / He BACKSCATTERING AND INFRARED ABSORPTION STUDIES OF NATURAL DIAMOND CONTAINING HIGH CONCENTRATIONS OF IMPLANTED SILICON. Inst Phys Conf Ser. 31. ed. Inst of Phys, 1977. pp. 354-361
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abstract = "The depth distribution of Si ions implanted with an energy of 40 keV into natural diamond crystals at room temperature is measured using 1. 8 MeV He ion backscattering. The crystalline SiC layer formation and structure ordering occur as a result of annealing at temperatures above 900 degree C. In addition, the annealing at 1200 degree C is followed by considerable changes of the relation between the components C and Si in the implanted layer due to the migration of atoms.",
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AU - Mezey, G.

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