Hall effect in the charge density wave system (TaSe4)2I

L. Forró, J. R. Cooper, A. Jánossy, M. Maki

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Abstract

We present Hall effect measurements on the charge density wave (CDW) system (TaSe4)2I. The room temperature carrier density is found to be (1.7 ± 4). 1021 cm-3. In the semi-conducting Peierls state the Hall voltage (VH) is measured both below and above the threshold electric field (ET) for the depinning of CDWs. Above ET VH is no longer proportional to the electric field.

Original languageEnglish
Pages (from-to)715-718
Number of pages4
JournalSolid State Communications
Volume62
Issue number10
DOIs
Publication statusPublished - Jun 1987

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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