Growth structure of nickel films on GaAs(001) by d.c.-biased plasma-sputter-deposition

Jiping Yang, Kenji Makihara, Hisashi Nakai, Mituru Hashimoto, Arpad Barna, Peter B. Barna

Research output: Contribution to journalArticle

7 Citations (Scopus)


Ni films 200 nm thick are deposited on GaAs(001) substrates at 280°C by d.c. plasma sputtering at 2.5 kV in pure Ar gas. A d.c. bias voltage Vs from 0 to -180 V is applied to the substrate during deposition. The effect of Vs on the film growth is investigated by measuring TCR from 150 to 300 K, and resistance at 300 K, also by AES, XTEM, and RHEED observations. Minimum resistance and maximum TCR are observed at Vs between -80 and -100 V. The Ni film is polycrystalline with a [001] texture, while an As2Ni thin layer is grown penetrating into the GaAs substrate with As2Ni[111]∥GaAs[111] and As2Ni[011]∥GaAs[011]. The Ni film, composing of uniformly grown grains, is obtained with a higher value of TCR at Vs = -80 V.

Original languageEnglish
Pages (from-to)115-119
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Apr 29 1998


  • GaAs substrate
  • Ni film
  • Polycrystalline
  • d.c.-Biased plasma-sputter-deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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