Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

M. Colocci, F. Bogani, L. Carraresi, R. Mattolini, A. Bosacchi, S. Franchi, P. Frigeri, M. Rosa-Clot, S. Taddei

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Abstract

Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

Original languageEnglish
Pages (from-to)3140-3142
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number23
Publication statusPublished - Jun 9 1997

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quantum dots
photoluminescence
excitation
molecular beam epitaxy
spacing
wafers
electronics
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Colocci, M., Bogani, F., Carraresi, L., Mattolini, R., Bosacchi, A., Franchi, S., ... Taddei, S. (1997). Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition. Applied Physics Letters, 70(23), 3140-3142.

Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition. / Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Rosa-Clot, M.; Taddei, S.

In: Applied Physics Letters, Vol. 70, No. 23, 09.06.1997, p. 3140-3142.

Research output: Contribution to journalArticle

Colocci, M, Bogani, F, Carraresi, L, Mattolini, R, Bosacchi, A, Franchi, S, Frigeri, P, Rosa-Clot, M & Taddei, S 1997, 'Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition', Applied Physics Letters, vol. 70, no. 23, pp. 3140-3142.
Colocci M, Bogani F, Carraresi L, Mattolini R, Bosacchi A, Franchi S et al. Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition. Applied Physics Letters. 1997 Jun 9;70(23):3140-3142.
Colocci, M. ; Bogani, F. ; Carraresi, L. ; Mattolini, R. ; Bosacchi, A. ; Franchi, S. ; Frigeri, P. ; Rosa-Clot, M. ; Taddei, S. / Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition. In: Applied Physics Letters. 1997 ; Vol. 70, No. 23. pp. 3140-3142.
@article{b3066e56e3fc41dca07271186403d324,
title = "Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition",
abstract = "Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.",
author = "M. Colocci and F. Bogani and L. Carraresi and R. Mattolini and A. Bosacchi and S. Franchi and P. Frigeri and M. Rosa-Clot and S. Taddei",
year = "1997",
month = "6",
day = "9",
language = "English",
volume = "70",
pages = "3140--3142",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

AU - Colocci, M.

AU - Bogani, F.

AU - Carraresi, L.

AU - Mattolini, R.

AU - Bosacchi, A.

AU - Franchi, S.

AU - Frigeri, P.

AU - Rosa-Clot, M.

AU - Taddei, S.

PY - 1997/6/9

Y1 - 1997/6/9

N2 - Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

AB - Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

UR - http://www.scopus.com/inward/record.url?scp=0031560893&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031560893&partnerID=8YFLogxK

M3 - Article

VL - 70

SP - 3140

EP - 3142

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

ER -