Growth of oxygen-doped silicon epitaxial films by co-evaporation of silicon and SiO in a molecular beam epitaxial system

Wei Xin Ni, G. Radnóczi, Göran V. Hansson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

SiOx films have been grown at substrate temperatures from room temperature to 750°C by co-evaporation of silicon and SiO in an ultrahigh vacuum system. Essentially single-crystalline SiOx films with up to 10 at.% oxygen were obtained in the temperature range of 500-710°C. The growth behaviour as well as surface and film morphology was studied in situ by both low energy and reflection high energy electron diffraction, and Auger- and X-ray photoelectron spectroscopy. Auger depth profiling, cross-sectional transmission electron microscopy, and scanning electron microscopy studies of the films after growth gave further information about the strongly temperature and flux ratio dependent behaviour of oxygen incorporation and microstructural properties of grown SiOx films.

Original languageEnglish
Pages (from-to)403-414
Number of pages12
JournalThin Solid Films
Volume184
Issue number1-2
DOIs
Publication statusPublished - 1990

Fingerprint

Molecular beams
Epitaxial films
Silicon
silicon films
molecular beams
Evaporation
evaporation
Oxygen
silicon
oxygen
Temperature
Reflection high energy electron diffraction
temperature ratio
Depth profiling
vacuum systems
Ultrahigh vacuum
high energy electrons
ultrahigh vacuum
X ray photoelectron spectroscopy
electron diffraction

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Growth of oxygen-doped silicon epitaxial films by co-evaporation of silicon and SiO in a molecular beam epitaxial system. / Ni, Wei Xin; Radnóczi, G.; Hansson, Göran V.

In: Thin Solid Films, Vol. 184, No. 1-2, 1990, p. 403-414.

Research output: Contribution to journalArticle

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