Growth of Ni layers on single crystal sapphire substrates

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Ni single crystal films have been grown by sputtering on the (0001) basal plane of sapphire varying temperature, flux and substrate bias. In the full parameter range epitaxial growth was observed by transmission electron microscopy. The (111) planes of fcc single crystal Ni grow parallel to the substrate surface. Surprisingly, two alternative planes of Ni were parallel to the sapphire (10-10) planes in different domains, either the nickel {110} planes ("A" orientation) or its {211} planes ("B" orientation). In all cases twinned areas appeared in both domains. Changing the flux, the temperature and the bias, it was possible to vary the ratio of the two orientations and to reach that only one orientation remained in a given sample. The phenomenon can be explained by differences in cohesion and elastic strain in the two domains.

Original languageEnglish
Pages (from-to)96-101
Number of pages6
JournalThin Solid Films
Volume539
DOIs
Publication statusPublished - Jul 31 2013

Keywords

  • AFM
  • Double-position
  • Epitaxial
  • Ni
  • Sapphire
  • Singe crystal
  • Sputtering
  • TEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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