Growth of highly curved Al 1-xin xN nanocrystals

György Z. Radnóczi, Timo Seppänen, Béla Pécz, Lars Hultman, Jens Birch

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A materials structure is reported that is characterized by high lattice curvature assigned to a compositional gradient. The phenomenon occurs for physical vapour deposition of Al 1-xIn xN epitaxial thin films with directional fluxes of Al and In at kinetically limited growth conditions. According to our growth model unit cells are incorporated on the growth surfaces of emerging whiskers (nanowires) with a continuously varying lattice parameter depending on their position with respect to Al- and In-rich sides of the whisker. Such curved crystals are effectively quenched solid solutions. We present a description of this generic, self-assembled curved crystal structure and its implications.

Original languageEnglish
Pages (from-to)R76-R78
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume202
Issue number7
DOIs
Publication statusPublished - May 1 2005

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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