Growth of epitaxial β-SiC at the SiO2/Si interface as a result of annealing in CO

O. H. Krafcsik, K. Josepovits, L. Tóth, B. Pécz, P. Deák

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

A new, simple method is described resulting in the growth of cubic SiC on Si. Thermally oxidized Si(100) wafers annealed in a CO-containing atmosphere at 1190°C for several hours show epitaxial 3C-SiC grains, formed at the SiO2/Si interface, growing into the silicon crystal. After 3 h the SiC grains have a diameter of 25-50 nm and a width of ∼20 nm. They contain very few visible defects, and no void between the grain and the Si matrix can be observed. After 20 h, the size of the epitaxial SiC grains doubles, but the density of grains remains about the same. At 900°C no SiC grain formation is observed.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume149
Issue number4
DOIs
Publication statusPublished - Apr 2002

Fingerprint

Carbon Monoxide
Annealing
annealing
Silicon
Defects
Crystals
grain formation
voids
wafers
atmospheres
defects
silicon
matrices
crystals

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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Growth of epitaxial β-SiC at the SiO2/Si interface as a result of annealing in CO. / Krafcsik, O. H.; Josepovits, K.; Tóth, L.; Pécz, B.; Deák, P.

In: Journal of the Electrochemical Society, Vol. 149, No. 4, 04.2002.

Research output: Contribution to journalArticle

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