Growth of amorphous SiC film on Si by means of ion beam induced mixing

Árpád Barna, Sandor Gurban, László Kotis, János Lábár, Attila Sulyok, Attila L. Tóth, Miklós Menyhárd, Janez Kovac, Peter Panjan

Research output: Contribution to journalArticle

13 Citations (Scopus)


Focused ion beam (FIB)-induced ion mixing was studied in a C/Si/C/Si/C/Si substrate multilayer structure sample by means of Auger electron spectroscopy (AES) depth profiling, and transmission electron microscopy (TEM). The multilayer sample was irradiated with Ga + ions using focused ion beam (FIB) at room temperature. The ion energy and fluence of the ion irradiation varied in the range of 10-30 keV and 10-120 × 10 15 ions/cm 2 , respectively. The ion irradiation induced a slightly asymmetric intermixing of the top C and Si layers, which could be modeled by the TRIDYN code. During ion mixing, part of the intermixed C and Si atoms reacted, forming amorphous SiC. The amount of SiC depends on the square root of the Ga + fluence. Thus, amorphous SiC thin film (with Ga contamination) with thickness in the nanometer range can be produced by means of FIB.

Original languageEnglish
Pages (from-to)367-372
Number of pages6
JournalApplied Surface Science
Publication statusPublished - Dec 15 2012


  • Amorphous SiC
  • Compound formation by FIB
  • Defect mediated compound formation
  • Ion damage
  • Ion mixing
  • SiC coating

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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