Growth of amorphous semiconductors

Tight-binding molecular dynamics study

K. Kohary, S. Kugler

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In our computer simulation the preparation process was similar to the atom-by-atom deposition onto a substrate which is a standard procedure to prepare amorphous semicondutors. For the calculation of the interactions between carbon and silicon atoms, tight-binding potentials were used. The Newton equations of motion were solved by the Verlet algorithm.

Original languageEnglish
Pages (from-to)746-749
Number of pages4
JournalJournal of Non-Crystalline Solids
Volume266-269 B
Publication statusPublished - May 1 2000

Fingerprint

Amorphous semiconductors
amorphous semiconductors
Molecular dynamics
molecular dynamics
Atoms
atoms
Silicon
newton
Equations of motion
equations of motion
Carbon
computerized simulation
preparation
carbon
Computer simulation
silicon
Substrates
interactions

ASJC Scopus subject areas

  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

Cite this

Growth of amorphous semiconductors : Tight-binding molecular dynamics study. / Kohary, K.; Kugler, S.

In: Journal of Non-Crystalline Solids, Vol. 266-269 B, 01.05.2000, p. 746-749.

Research output: Contribution to journalArticle

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