Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy

N. Vouroutzis, T. T. Zorba, C. A. Dimitriadis, K. M. Paraskevopoulos, L. Dózsa, G. Molnár

Research output: Contribution to journalArticle

18 Citations (Scopus)


Reactive deposition epitaxy is used for the growth of semiconducting β-FeSi2 particles on Si(0 0 1) substrate. Iron layers of thickness 6 nm were deposited on Si substrates at 600 °C, followed by in situ annealing at 600 °C for 10, 20 and 30 min. The coexistence of the equilibrium α-FeSi2, β-FeSi2 phases and the metastable γ-FeSi2 phase is revealed through transmission electron microscopy (TEM) analysis, whereas the evolution of the semiconducting β-FeSi2 phase with annealing time is investigated with infrared transmittance measurements.

Original languageEnglish
Pages (from-to)202-205
Number of pages4
JournalJournal of Alloys and Compounds
Issue number1-2
Publication statusPublished - Jan 10 2008


  • Iron disilicide
  • Nanoislands
  • Reactive deposition epitaxy

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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