Growth behavior and microstructure of Co-Ge films prepared on GaAs substrate by high-temperature sequential deposition

J. Shi, D. Ishii, M. Hashimoto, A. Barna, P. Barna, Y. Haga, O. Nittono

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Abstract

The growth behavior and microstructure of Co-Ge/GaAs films prepared by the high-temperature sequential deposition (HTSD) method have been investigated using X-ray diffraction, cross-sectional transmission electron microscopy, X-ray photoelectron sepectroscopy and atomic force microscopy. Three germanides were formed in the films at temperatures ranging from 300 to 600 °C. Polycrystalline CoGe with poor crystallinity was formed at 300 °C. On the other hand, epitaxial Co5Ge7 were formed at 400 and 500 °C. The epitaxial orientations for the Co5Ge7 films formed at 400 and 500 °C are [0 0 1] (1 0 0) Co5Ge7∥[1 1 0] (001) Ge∥[1 1 0] (0 0 1) GaAs and [1 0 0] (0 0 1) Co5Ge7∥[1 1 0] (0 0 1) Ge∥[1 1 0] (0 0 1) GaAs, respectively. Then, at 600 °C polycrystalline CoGe2 was formed in the film. Based on the experimental results, the solid-state reaction mechanism for Co-Ge binary system and the epitaxial growth mode for Co5Ge7 are discussed.

Original languageEnglish
Pages (from-to)235-242
Number of pages8
JournalJournal of Crystal Growth
Volume222
Issue number1-2
DOIs
Publication statusPublished - Jan 2001

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microstructure
Microstructure
Substrates
germanides
Temperature
Photoelectrons
Solid state reactions
Epitaxial growth
Atomic force microscopy
crystallinity
photoelectrons
x rays
atomic force microscopy
Transmission electron microscopy
solid state
X ray diffraction
X rays
transmission electron microscopy
gallium arsenide
diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth behavior and microstructure of Co-Ge films prepared on GaAs substrate by high-temperature sequential deposition. / Shi, J.; Ishii, D.; Hashimoto, M.; Barna, A.; Barna, P.; Haga, Y.; Nittono, O.

In: Journal of Crystal Growth, Vol. 222, No. 1-2, 01.2001, p. 235-242.

Research output: Contribution to journalArticle

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