Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film

Kenji Makihara, Jiping Yang, Ji Shi, Mituru Hashimoto, Susumu Maruyama, A. Barna

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Radio frequency (rf) magnetron sputtering was used to study the growth mode of Ni films, covered with Ti films, on the GaAs(001) substrates at 300°C. Ti films were inserted into the interface to restrain the chemical reactions at the Ni/GaAs interface. The electrical properties of the films were studied by measuring resistivity and its temperature coefficient below 300 K.

Original languageEnglish
Pages (from-to)2494-2498
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume19
Issue number5
DOIs
Publication statusPublished - Sep 2001

Fingerprint

radio frequencies
Magnetron sputtering
Chemical reactions
chemical reactions
magnetron sputtering
Electric properties
electrical properties
electrical resistivity
gallium arsenide
Substrates
coefficients
Temperature
temperature

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film. / Makihara, Kenji; Yang, Jiping; Shi, Ji; Hashimoto, Mituru; Maruyama, Susumu; Barna, A.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 19, No. 5, 09.2001, p. 2494-2498.

Research output: Contribution to journalArticle

Makihara, Kenji ; Yang, Jiping ; Shi, Ji ; Hashimoto, Mituru ; Maruyama, Susumu ; Barna, A. / Growth and structure of Ni films radio frequency sputter deposited on GaAs(001) covered with Ti film. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2001 ; Vol. 19, No. 5. pp. 2494-2498.
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