Growth and properties of InxGa1-xAsySb1-y on GaSb

V. Rakovics, J. Balázs, B. Põdör, A. L. Tóth, Zs J. Horváth, Z. E. Horváth

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Lattice matched InxGa1-xAsySb1-y(y/x=0.9) quaternary alloy layers with 0 < × < 0.20 were grown by liquid phase epitaxy on (100) oriented GaSb. Based on optical transmission and electron microprobe measurements the dependence of the band gap energy on the alloy composition was established. Two lowest band gap observed was ∼0.55 eV. The dependence of the band gap on the composition exhibits smaller bowing than given by recent theoretical calculations based on the correlated function expansion technique. Near and below the fundamental absorption edge an exponential absorption tail corresponding to the Urbach rule was observed which is ascribed to the effects of the random potential due to the alloy disorder.

Original languageEnglish
Pages (from-to)1195-1199
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4746 II
Publication statusPublished - Jan 1 2002
EventPhysics of Semiconductor Devices - Delhi, India
Duration: Dec 11 2001Dec 15 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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