Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

L. Hultman, H. Ljungcrantz, C. Hallin, E. Janzén, J. E. Sundgren, B. Pécz, L. R. Wallenberg

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Abstract

Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110], and TiN(111) ∥ 6H-SiC(0001) and TiN[110],[101] ∥ 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 × 10-3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm-3.

Original languageEnglish
Pages (from-to)2458-2462
Number of pages5
JournalJournal of Materials Research
Volume11
Issue number10
Publication statusPublished - Oct 1996

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Epitaxial films
Reactive sputtering
Electronic properties
Magnetron sputtering
magnetron sputtering
Thin films
Substrates
thin films
electronics
Stacking faults
Ultrahigh vacuum
Contact resistance
High resolution transmission electron microscopy
contact resistance
crystal defects
ultrahigh vacuum
positioning
Nucleation
Doping (additives)
nucleation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Hultman, L., Ljungcrantz, H., Hallin, C., Janzén, E., Sundgren, J. E., Pécz, B., & Wallenberg, L. R. (1996). Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering. Journal of Materials Research, 11(10), 2458-2462.

Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering. / Hultman, L.; Ljungcrantz, H.; Hallin, C.; Janzén, E.; Sundgren, J. E.; Pécz, B.; Wallenberg, L. R.

In: Journal of Materials Research, Vol. 11, No. 10, 10.1996, p. 2458-2462.

Research output: Contribution to journalArticle

Hultman, L, Ljungcrantz, H, Hallin, C, Janzén, E, Sundgren, JE, Pécz, B & Wallenberg, LR 1996, 'Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering', Journal of Materials Research, vol. 11, no. 10, pp. 2458-2462.
Hultman, L. ; Ljungcrantz, H. ; Hallin, C. ; Janzén, E. ; Sundgren, J. E. ; Pécz, B. ; Wallenberg, L. R. / Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering. In: Journal of Materials Research. 1996 ; Vol. 11, No. 10. pp. 2458-2462.
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abstract = "Epitaxial TiN films were grown on cubic (3C)-SiC(001) and hexagonal (6H)-SiC(0001) substrates by ultrahigh vacuum reactive magnetron sputtering from a Ti target in a mixed Ar and N2 discharge at a substrate temperature of 700°C. Cross-sectional transmission electron microscopy, including high-resolution imaging, showed orientational relationships TiN(001) ∥ 3C-SiC(001), and TiN[110] ∥ 3C-SiC[110], and TiN(111) ∥ 6H-SiC(0001) and TiN[110],[101] ∥ 6H-SiC[1210]. In the latter case, twin-related TiN domains formed as the result of nucleation on SiC terraces with an inequivalent stacking sequence of Si and C. The TiN/SiC interface was locally atomically sharp for both SiC polytypes. Defects in the TiN layers consisted of threading double positioning domain boundaries in TiN(111) on 6H-SiC. Stacking faults in 3C-SiC did not propagate upon growth of TiN. Room-temperature resistivity of TiN films was ρ = 14 μΩ cm for 6H-SiC(0001) and ρ = 17 μΩ cm for 3C-SiC(001) substrates. Specific contact resistance of TiN to 6H-SiC(0001) was 1.3 × 10-3 Ω cm2 for a 6H-SiC substrate with an n-type doping of 5 × 1017 cm-3.",
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AU - Hallin, C.

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AU - Sundgren, J. E.

AU - Pécz, B.

AU - Wallenberg, L. R.

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