Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures

Z. Horváth, L. Dózsa, Vo Van Tuyen, B. Podör, Á Nemcsics, P. Frigeri, E. Gombia, R. Mosca, S. Franchi

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well.

Original languageEnglish
Pages (from-to)89-92
Number of pages4
JournalThin Solid Films
Volume367
Issue number1-2
Publication statusPublished - May 15 2000

Fingerprint

Semiconductor quantum wells
Semiconductor quantum dots
quantum dots
quantum wells
recharging
confining
gallium arsenide
indium arsenide

Keywords

  • Molecular beam epitaxy growth of embedded heterostructures
  • Quantum dots
  • Quantum wells

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Horváth, Z., Dózsa, L., Van Tuyen, V., Podör, B., Nemcsics, Á., Frigeri, P., ... Franchi, S. (2000). Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures. Thin Solid Films, 367(1-2), 89-92.

Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures. / Horváth, Z.; Dózsa, L.; Van Tuyen, Vo; Podör, B.; Nemcsics, Á; Frigeri, P.; Gombia, E.; Mosca, R.; Franchi, S.

In: Thin Solid Films, Vol. 367, No. 1-2, 15.05.2000, p. 89-92.

Research output: Contribution to journalArticle

Horváth, Z, Dózsa, L, Van Tuyen, V, Podör, B, Nemcsics, Á, Frigeri, P, Gombia, E, Mosca, R & Franchi, S 2000, 'Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures', Thin Solid Films, vol. 367, no. 1-2, pp. 89-92.
Horváth Z, Dózsa L, Van Tuyen V, Podör B, Nemcsics Á, Frigeri P et al. Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures. Thin Solid Films. 2000 May 15;367(1-2):89-92.
Horváth, Z. ; Dózsa, L. ; Van Tuyen, Vo ; Podör, B. ; Nemcsics, Á ; Frigeri, P. ; Gombia, E. ; Mosca, R. ; Franchi, S. / Growth and electrical characteristics of InAs/GaAs quantum well and quantum dot structures. In: Thin Solid Films. 2000 ; Vol. 367, No. 1-2. pp. 89-92.
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