Growth and characterization of Bi4Ge3O12 single crystals

R. Voszka, G. Gévay, I. Földvári, S. Keszthelyi-Lándori

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Abstract

Experiences obtained in the growth of Bi4Ge3O12 single crystals together with characteristic data on the crystals are described. The tail of the self-absorption near the absorption edge is shown to depend sensitively on crystal quality. This property can be used for crystal characterization.

Original languageEnglish
Pages (from-to)7-13
Number of pages7
JournalActa Physica Academiae Scientiarum Hungaricae
Volume53
Issue number1-2
DOIs
Publication statusPublished - Aug 1 1982

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ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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