Growth and characterization of Bi4Ge3O12 single crystals

R. Voszka, G. Gévay, I. Földvári, S. Keszthelyi-Lándori

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Experiences obtained in the growth of Bi4Ge3O12 single crystals together with characteristic data on the crystals are described. The tail of the self-absorption near the absorption edge is shown to depend sensitively on crystal quality. This property can be used for crystal characterization.

Original languageEnglish
Pages (from-to)7-13
Number of pages7
JournalActa Physica Academiae Scientiarum Hungaricae
Volume53
Issue number1-2
DOIs
Publication statusPublished - Aug 1982

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single crystals
crystals
self absorption

ASJC Scopus subject areas

  • Nuclear and High Energy Physics

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Growth and characterization of Bi4Ge3O12 single crystals. / Voszka, R.; Gévay, G.; Földvári, I.; Keszthelyi-Lándori, S.

In: Acta Physica Academiae Scientiarum Hungaricae, Vol. 53, No. 1-2, 08.1982, p. 7-13.

Research output: Contribution to journalArticle

Voszka, R. ; Gévay, G. ; Földvári, I. ; Keszthelyi-Lándori, S. / Growth and characterization of Bi4Ge3O12 single crystals. In: Acta Physica Academiae Scientiarum Hungaricae. 1982 ; Vol. 53, No. 1-2. pp. 7-13.
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