Grazing irradiation of porous silicon by 500 keV He ions

A. Manuaba, F. Pászti, G. Battistig, C. Ortega, A. Grosman

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Different types of porous Si layers of several μm thickness were irradiated at a glancing angle of 86° by 500 keV He ions. Due to the bombardment, a surface layer corresponding to a thickness equivalent to ∼0.12 μm in compact Si underwent strong modifications. These processes were studied by thermal nitridation of irradiated and non-irradiated samples in 15N ambient followed by depth profiling of the 15N content by means of the 15N(p,αγ)12C reaction. After irradiation with different fluences up to 48 mC/cm2, the irradiated layer of the spongy type samples of 60, 68, and 78% porosity completely densified, preventing the penetration of the N. In columnar samples of 59, 77 and 88% porosity the N penetration remains high even for the highest irradiation dose. Results extracted from the measured N profiles of both columnar and spongy structures will be discussed.

Original languageEnglish
Pages (from-to)349-351
Number of pages3
JournalVacuum
Volume50
Issue number3-4
DOIs
Publication statusPublished - Jul 1 1998

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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