Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC

András Kovács, Martial Duchamp, Rafal E. Dunin-Borkowski, Rositza Yakimova, Péter L. Neumann, Hannes Behmenburg, Bartosz Foltynski, Cristoph Giesen, Michael Heuken, B. Pécz

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The implementation of graphene layers in gallium nitride (GaN) heterostructure growth can solve self-heating problems in nitride-based high-power electronic and light-emitting optoelectronic devices. In the present study, high-quality GaN layers are grown on patterned graphene layers and 6H-SiC by metalorganic chemical vapor deposition. A periodic pattern of graphene layers is fabricated on 6H-SiC by using polymethyl methacrylate deposition and electron beam lithography, followed by etching using an Ar/O2 gas atmosphere. Prior to GaN growth, an AlN buffer layer and an Al0.2Ga0.8N transition layer are deposited. The atomic structures of the interfaces between the 6H-SiC and graphene, as well as between the graphene and AlN, are studied using scanning transmission electron microscopy. Phase separation of the Al0.2Ga0.8N transition layer into an AlN and GaN superlattice is observed. Above the continuous graphene layers, polycrystalline defective GaN is rapidly overgrown by better quality single-crystalline GaN from the etched regions. The lateral overgrowth of GaN results in the presence of a low density of dislocations (≈109 cm-2) and inversion domains and the formation of a smooth GaN surface.

Original languageEnglish
Article number1400230
JournalAdvanced Materials Interfaces
Volume2
Issue number2
DOIs
Publication statusPublished - Jan 1 2015

Fingerprint

Gallium nitride
Graphene
Heat problems
Electron beam lithography
Metallorganic chemical vapor deposition
Buffer layers
Power electronics
Polymethyl methacrylates
Nitrides
Phase separation
Optoelectronic devices
Heterojunctions
Etching
Crystalline materials
Transmission electron microscopy
Scanning electron microscopy

Keywords

  • 6HSiC
  • GaN
  • graphene
  • transmission electron microscopy

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Kovács, A., Duchamp, M., Dunin-Borkowski, R. E., Yakimova, R., Neumann, P. L., Behmenburg, H., ... Pécz, B. (2015). Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC. Advanced Materials Interfaces, 2(2), [1400230]. https://doi.org/10.1002/admi.201400230

Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC. / Kovács, András; Duchamp, Martial; Dunin-Borkowski, Rafal E.; Yakimova, Rositza; Neumann, Péter L.; Behmenburg, Hannes; Foltynski, Bartosz; Giesen, Cristoph; Heuken, Michael; Pécz, B.

In: Advanced Materials Interfaces, Vol. 2, No. 2, 1400230, 01.01.2015.

Research output: Contribution to journalArticle

Kovács, A, Duchamp, M, Dunin-Borkowski, RE, Yakimova, R, Neumann, PL, Behmenburg, H, Foltynski, B, Giesen, C, Heuken, M & Pécz, B 2015, 'Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC', Advanced Materials Interfaces, vol. 2, no. 2, 1400230. https://doi.org/10.1002/admi.201400230
Kovács A, Duchamp M, Dunin-Borkowski RE, Yakimova R, Neumann PL, Behmenburg H et al. Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC. Advanced Materials Interfaces. 2015 Jan 1;2(2). 1400230. https://doi.org/10.1002/admi.201400230
Kovács, András ; Duchamp, Martial ; Dunin-Borkowski, Rafal E. ; Yakimova, Rositza ; Neumann, Péter L. ; Behmenburg, Hannes ; Foltynski, Bartosz ; Giesen, Cristoph ; Heuken, Michael ; Pécz, B. / Graphoepitaxy of High-Quality GaN Layers on Graphene/6H-SiC. In: Advanced Materials Interfaces. 2015 ; Vol. 2, No. 2.
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