Graphene nanopatterns with crystallographic orientation control for nanoelectronic applications

L. P. Biró, P. Nemes-Incze, G. Dobrik, Chanyong Hwang, L. Tapasztó

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The possibility of parallel processing of several features was investigated experimentally for the two methods allowing the crystallographically controlled nanopatterning of graphene: scanning tunneling lithography (STL) and carbothermal etching (CTE). It was found that with multitip systems both methods are suitable for parallel processing. CTE has the advantages that only in the atomic force microscope (AFM) indentation phase is needed the multitip system and it can reveal the location of grain boundaries, so that the nanodevices can be placed in a way that they do not cross grain boundaries. STL is well suited for purposefully producing twisted graphene multilayers with precisely-know misorientations of the individual layers, as also evidenced by Moiré-type patterns observed in the atomic resolution scanning tunneling microscopy (STM) images.

Original languageEnglish
Pages (from-to)1212-1217
Number of pages6
JournalDiamond and Related Materials
Volume20
Issue number8
DOIs
Publication statusPublished - Aug 1 2011

Keywords

  • AFM
  • Graphene
  • Graphene nanoribbons
  • Moiré patterns
  • Multiple tip nanolithography
  • Nanopatterning
  • STM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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