Our study shows the impact of the process parameters V/III ratio, pressure and temperature on growth and morphology of GaN nanowires (NWs) synthesized by an Au-initiated vapour-liquid-solid mechanism on a sapphire substrate. We confined a temperature window for successful GaN NW growth and show how the variation of reactor pressure changes the NW morphology. Using a very low V/III ratio, NW tapering, which was observed for higher V/III ratios, could be avoided. The optimization of these process parameters led to non-tapered GaN NWs, aligned perpendicular to the substrate. Further evaluation by scanning electron microscopy showed a high density (~3·109/cm2) of hexagonal c-plane GaN NWs having diameters of 60 ± 9 nm. Transmission electron microscopy revealed single-crystalline NWs without threading dislocations but some stacking faults. The use of a very low V/III ratio was found to be important for the successful selective growth and, most interestingly, led to a difference in NW and gold catalyst droplet diameter. For chemical analysis of the NW and its catalyst droplet, electron energy loss spectroscopy was employed confirming gold as the catalyst material.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - Jul 1 2011|
- Au catalyst
ASJC Scopus subject areas
- Condensed Matter Physics