Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers

G. Papp, F. M. Peeters

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

The temperature-dependent giant magnetoresistance effect is investigated in a magnetically modulated two-dimensional electron gas, which can be realized by depositing two parallel ferromagnets on the top and bottom of a heterostructure. The effective potential for electrons arising for parallel magnetization allows the electrons to resonantly tunnel through the magnetic barriers, while this is excluded in the anti-parallel situation. Such a discrepancy results in a giant magnetoresistance ratio (MRR), which can be up to 1031%. The MRR shows a strong dependence on temperature, but our study indicates that for realistic parameters for a GaAs heterostructure the effect can be as high as 104% at 4 K.

Original languageEnglish
Pages (from-to)8275-8283
Number of pages9
JournalJournal of Physics Condensed Matter
Volume16
Issue number46
DOIs
Publication statusPublished - Nov 24 2004

Fingerprint

Giant magnetoresistance
Two dimensional electron gas
electron gas
Heterojunctions
Electrons
Magnetoresistance
tunnels
Magnetization
Tunnels
electrons
Temperature
magnetization
temperature
gallium arsenide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Giant magnetoresistance in a two-dimensional electron gas modulated by magnetic barriers. / Papp, G.; Peeters, F. M.

In: Journal of Physics Condensed Matter, Vol. 16, No. 46, 24.11.2004, p. 8275-8283.

Research output: Contribution to journalArticle

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