Giant fluctuations and gate control of the g-factor in InAs nanowire quantum dots

S. Csonka, L. Hofstetter, F. Freitag, S. Oberholzer, C. Schönenberger, T. S. Jespersen, M. Aagesen, J. Nygård

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75 Citations (Scopus)

Abstract

We study the g-factor of discrete electron states in InAs nanowire based quantum dots. The g values are determined from the magnetic field splitting of the zero bias anomaly due to the spin 1/2 Kondo effect. Unlike to previous studies based on 2DEG quantum dots, the g-factors of neighboring electron states show a surprisingly large fluctuation: g can scatter between 2 and 18. Furthermore electric gate tunability of the g-factor is demonstrated.

Original languageEnglish
Pages (from-to)3932-3935
Number of pages4
JournalNano Letters
Volume8
Issue number11
DOIs
Publication statusPublished - Nov 1 2008

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Csonka, S., Hofstetter, L., Freitag, F., Oberholzer, S., Schönenberger, C., Jespersen, T. S., Aagesen, M., & Nygård, J. (2008). Giant fluctuations and gate control of the g-factor in InAs nanowire quantum dots. Nano Letters, 8(11), 3932-3935. https://doi.org/10.1021/nl802418w