GeSe/GeS nanomultilayers prepared by pulsed laser deposition

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25 Citations (Scopus)


Cyclic pulsed laser deposition technique was used for the fabrication of chalcogenide GeSe/GeS nanomultilayers with ∼10 nm modulation period. Low-angle X-ray diffraction technique revealed good periodicity of prepared multilayered materials. The films are sensitive to annealing and illumination by 532 nm laser; both processes lead to refractive index decrease and blue shift of the short-wavelength absorption edge, respectively, connected with interdiffusion processes between the individual layers. Light-induced bleaching of the films is accompanied by giant volume-changes (up to 10% expansion) as observed by atomic force microscopy. These can be used for direct surface patterning and relief formation.

Original languageEnglish
Pages (from-to)5421-5424
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue number52-54
Publication statusPublished - Dec 15 2008


  • Amorphous films A1955
  • Diffusion D210
  • Laser deposition L105
  • Multilayers M360

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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