General interfacial layer expression for the equilibrium Schottky barrier height and its application to annealed Au-GaAs contacts

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Abstract

A general expression based on the interfacial layer model is derived for the equilibrium Schottky barrer height, and it is applied to annealed Au-GaAs contacts. Relations between the experimental barrier height, relative interfacial layer thickness and interface charge values, and the interface state energy distribution spectra are presented. The validity of the interfacial layer model is demonstrated. The obtained barrier height values and the near-ohmic behavior after high-temperature annealing are probably due to ionized donor type interface states in the upper half of the forbidden gap.

Original languageEnglish
Pages (from-to)931-933
Number of pages3
JournalApplied Physics Letters
Volume54
Issue number10
DOIs
Publication statusPublished - 1989

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energy distribution
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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title = "General interfacial layer expression for the equilibrium Schottky barrier height and its application to annealed Au-GaAs contacts",
abstract = "A general expression based on the interfacial layer model is derived for the equilibrium Schottky barrer height, and it is applied to annealed Au-GaAs contacts. Relations between the experimental barrier height, relative interfacial layer thickness and interface charge values, and the interface state energy distribution spectra are presented. The validity of the interfacial layer model is demonstrated. The obtained barrier height values and the near-ohmic behavior after high-temperature annealing are probably due to ionized donor type interface states in the upper half of the forbidden gap.",
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AU - Horváth, Z.

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AB - A general expression based on the interfacial layer model is derived for the equilibrium Schottky barrer height, and it is applied to annealed Au-GaAs contacts. Relations between the experimental barrier height, relative interfacial layer thickness and interface charge values, and the interface state energy distribution spectra are presented. The validity of the interfacial layer model is demonstrated. The obtained barrier height values and the near-ohmic behavior after high-temperature annealing are probably due to ionized donor type interface states in the upper half of the forbidden gap.

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