GasFET for the detection of reducing gases

U. Lampe, E. Simon, R. Pohle, M. Fleischer, H. Meixner, H. P. Frerichs, M. Lehmann, G. Kiss

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

A new gas sensor technology based on the signal read out of the work function change on sensitive films of thin or thick film SnO2 or Ga2O3 is used for the detection of reducing gases. The thick films are catalytic activated with Pd. The sensor device consists of a field effect transistor (FET) with suspended gate electrode prepared in hybrid flip chip technology (HFC-FET). Measurements with a Kelvin probe for testing the sensitive properties of the films and with complete assembled GasFET were performed. The SnO2 thick films activated with Pd show a high sensitivity to CO, hence concentrations lower than 1 vpm can be detected. The sensor response decreases with increasing temperature. A high cross sensitivity to oxygen and humidity is found only for very low oxygen concentrations (∼0 vol.%) or low humidity (∼0% r.h.). Thick films of SnO2 show a similar behavior to changes in the gas atmosphere in measurements performed using the Kelvin probe and with completely assembled GasFET sensors.

Original languageEnglish
Pages (from-to)106-110
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume111-112
Issue numberSUPPL.
DOIs
Publication statusPublished - Nov 11 2005

Keywords

  • Field effect transistor
  • Low power work function type gas sensor
  • Reducing gases

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Lampe, U., Simon, E., Pohle, R., Fleischer, M., Meixner, H., Frerichs, H. P., Lehmann, M., & Kiss, G. (2005). GasFET for the detection of reducing gases. Sensors and Actuators, B: Chemical, 111-112(SUPPL.), 106-110. https://doi.org/10.1016/j.snb.2005.06.041