Gas-sensitive electrical properties of pure and doped semiconducting Ga2O3 thick films

J. Frank, M. Fleischer, H. Meixner

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

The gas-sensitive electrical properties of pure Ga2O3 thick films are investigated. The influence of doping on these properties has also been studied. SnO2 was used as donator type dopand. It was found that there is an increase in the overall conductivity due to the doping up to two orders of magnitude. Despite this high conductivity, the gas sensitivity remains almost unchanged in all cases. There is no effect of the dopands on the bulk controlled oxygen sensitivity. Pure and doped Ga2O3 thick films have been proved to be reproducible and stable sensor base materials. The result forms the base for the use of screen-printed electrodes or a further reduction of the chip size for a decreased heating power consumption.

Original languageEnglish
Pages (from-to)318-321
Number of pages4
JournalSensors and Actuators, B: Chemical
VolumeB48
Issue number1 -3 pt 4
Publication statusPublished - Jan 1 1998

Fingerprint

Semiconducting films
Thick films
thick films
Electric properties
Gases
electrical properties
Doping (additives)
conductivity
gases
Electric power utilization
chips
Oxygen
Heating
Electrodes
heating
electrodes
sensitivity
sensors
Sensors
oxygen

ASJC Scopus subject areas

  • Analytical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Gas-sensitive electrical properties of pure and doped semiconducting Ga2O3 thick films. / Frank, J.; Fleischer, M.; Meixner, H.

In: Sensors and Actuators, B: Chemical, Vol. B48, No. 1 -3 pt 4, 01.01.1998, p. 318-321.

Research output: Contribution to journalArticle

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